Transistor contacts and methods of forming the same
US-2024395871-A1 · Nov 28, 2024 · US
Semiconductor device having SSOI substrate with relaxed tensile stress
US8963248B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8963248-B2 |
| Application number | US-201314011977-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 28, 2013 |
| Priority date | Nov 30, 2012 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A method comprises: forming a tensile SSOI layer on a buried oxide layer on a bulk substrate; forming a plurality of fins in the SSOI layer; removing a portion of the fins; annealing remaining portions of the fins to relax a tensile strain of the fins; and merging the remaining portions of the fins.
First claim
Opening claim text (preview).
The invention claimed is: 1. An apparatus for a semiconductor device, the apparatus comprising: a substrate having a tensile SSOI layer; a plurality of fins formed on the SSOI layer and extending perpendicular from the substrate and parallel to each other, the fins having a relaxed uniaxial tensile strain; a gate positioned across and extending transverse to the fins, the fins on a first side of the gate being in communication with sources and the fins on a second side of the…
Assignees
Inventors
Classifications
- H10D30/024Primary
Electricity · mapped topic
- H10D86/011Primary
Electricity · mapped topic
Electricity · mapped topic
- H01L29/785Primary
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8963248B2 cover?
- A method comprises: forming a tensile SSOI layer on a buried oxide layer on a bulk substrate; forming a plurality of fins in the SSOI layer; removing a portion of the fins; annealing remaining portions of the fins to relax a tensile strain of the fins; and merging the remaining portions of the fins.
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H10D30/024. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).