Compound for organic thin film transistor and organic thin film transistor using the same

Patent metadata

Field	Value
Publication number	US-8963128-B2
Application number	US-200913060767-A
Country	US
Kind code	B2
Filing date	Aug 14, 2009
Priority date	Aug 29, 2008
Publication date	Feb 24, 2015
Grant date	Feb 24, 2015

Abstract

A compound for an organic thin film transistor having a structure represented by the following formula (1):

wherein at least one of R 1 to R 6 is a substituent, and the remaining R 1 to R 6 are a hydrogen atom.

First claim

The invention claimed is:

1. A material for an organic thin film transistor which comprises a compound having a structure represented by the following formula (1):

wherein
at least one of R 1 to R 6 is a substituent and the remaining R 1 to R 6 are a hydrogen atom;
said substituent, in each case, is a halogen atom, a normal alkyl group having 5 to 20 carbon atoms, a haloalkyl group having 1 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a haloalkoxy group having 1 to 30 carbon atoms, an alkylsilylacetylene group having 5 to 60 carbon atoms or a cyano group, which each may have a substituent; and
wherein R 2 and R 5 are each said substituent, and the two substituents are the same.

2. The material for an organic thin film transistor according to claim 1 , wherein the structure of the formula (1) is symmetrical with respect to the black point shown below:

3. An organic thin film transistor comprising:
a substrate and
three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer being provided on the substrate,
wherein source-drain current can be controlled by applying a voltage to the gate electrode, and
the organic semiconductor layer comprises the material for an organic thin film transistor according to claim 1 .

4. The organic thin film transistor according to claim 3 , wherein said transistor can emit light by utilizing current flowing between the source electrode and the drain electrode, and the light emission can be controlled by applying a voltage to the gate electrode.

5. The organic thin film transistor according to claim 4 , wherein one of the source electrode and the drain electrode comprises a substance having a work function of 4.2 eV or more and the other of the source electrode and the drain electrode comprises a substance having a work function of 4.3 eV or less.

6. The organic thin film transistor according to claim 3 , further comprising a buffer layer between the source and drain electrodes and the organic semiconductor layer.

7. An apparatus comprising an organic thin film transistor according to claim 3 .

8. The material for an organic thin film transistor according to claim 1 , wherein at least one substituent is a straight-chain alkyl group having 5 to 20 carbon atoms, a straight-chain haloalkyl group having 1 to 30 carbon atoms, a straight-chain alkoxy group having 1 to 30 carbon atoms, or a straight-chain haloalkoxy group having 1 to 30 carbon atoms, which each may have a substituent.

9. The material for an organic thin film transistor according to claim 1 , wherein at least one substituent is n-pentyl, n-hexyl, n-heptyl, n-octyl, n-nonyl, n-decyl, n-undecyl, n-dodecyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadecyl, n-heptadecyl, n-octadecyl, n-nonadecyl, n-icosane, n-henicosane, n-docosane, n-tricosane, n-tetracosane, n-pentacosane, n-hexacosane, n-heptacosane, n-octacosane, n-nonacosane or n-triacontane, which may have a substituent.

10. The material for an organic thin film transistor according to claim 1 , wherein said compound is one of the following compounds:

11. A material for an organic thin film transistor comprising a chrysene compound represented by the following formula (2):

wherein
at least one of R 7 to R 12 is a halogen atom, an alkyl group having 8 to 30 carbon atoms, a haloalkyl group having 2 to 30 carbon atoms, an alkoxy group having 2 to 30 carbon atoms, a haloalkoxy group having 2 to 30 carbon atoms, an alkylthio group having 1 to 30 carbon atoms, a haloalkylthio group having 1 to 30 carbon atoms, an aromatic hydrocarbon group having 10 to 60 carbon atoms, an alkylsilyl group having 3 to 20 carbon atoms, an alkylsilylacetylene group having 5 to 60 carbon atoms, or a cyano group, which each may have a substituent that is an aromatic hydrocarbon group, an alkyl group, an alkoxy group, a haloalkyl group, an alkylthio group, an alkylsulfonyl group, an aryloxy group, an arylthio group, an alkoxycarbonyl group, an amino group, a halogen atom, a cyano group, a nitro group, a hydroxyl group or a carboxyl group, and the remaining R 7 to R 12 are a hydrogen atom; or
wherein at least two of R 7 to R 12 are independently a halogen atom, an alkyl group having 5 to 30 carbon atoms, a haloalkyl group having 2 to 30 carbon atoms, an alkoxy group having 2 to 30 carbon atoms, a haloalkoxy group having 1 to 30 carbon atoms, an alkylthio group having 1 to 30 carbon atoms, a haloalkylthio group having 1 to 30 carbon atoms, an aromatic hydrocarbon group having 6 to 60 carbon atoms, an alkylsilyl group having 3 to 20 carbon atoms, an alkylsilylacetylene group having 5 to 60 carbon atoms or a cyano group, which each may have a substituent that is an aromatic hydrocarbon group, an alkyl group, an alkoxy group, a haloalkyl group, an alkylthio group, an alkylsulfonyl group, an aryloxy group, an arylthio group, an alkoxycarbonyl group, an amino group, a halogen atom, a cyano group, a nitro group, a hydroxyl group or a carboxyl group, and the remaining R 7 to R 12 are a hydrogen atom.

Assignees

• Nakano Yuki
• Saito Masatoshi
• Nakamura Hiroaki
• Kondo Hirofumi
• Idemitsu Kosan Co

Inventors

• Nakano Yuki
• Saito Masatoshi
• Nakamura Hiroaki
• Kondo Hirofumi

Classifications

• C07C15/38 Primary

  containing four rings · CPC title

• C07C43/20

  having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring · CPC title

• C07C2103/48

  Chemistry & Metallurgy · mapped topic

• H01L51/0541

  Electricity · mapped topic

• C07F7/0809

  Chemistry & Metallurgy · mapped topic