Method for etching film containing cobalt and palladium

Patent metadata

Field	Value
Publication number	US-8962489-B2
Application number	US-201414217652-A
Country	US
Kind code	B2
Filing date	Mar 18, 2014
Priority date	Mar 19, 2013
Publication date	Feb 24, 2015
Grant date	Feb 24, 2015

Abstract

Disclosed is a method for etching a film contains cobalt and palladium is provided. A hard mask is provided on the film. The method film includes a process “a” of etching the film by ion sputter etching, a process “b” of exposing a workpiece to plasma of a first gas containing halogen elements after the process “a” of etching of the film, a process “c” of exposing the workpiece to plasma of a second gas containing carbons after the process “b” of exposing the workpiece to the plasma of the first gas, and a process “d” of exposing the workpiece to plasma of a third gas containing a noble gas after the process “c” of exposing the workpiece to the plasma of the second gas. In the method, a temperature of a placement table on which the workpiece is placed is set to a first temperature of 10° C. or less in the process “a”, process “b” and process “c”.

First claim

What is claimed is:

1. A method for etching a film, which contains cobalt and palladium and on which a hard mask is provided, of a workpiece, the method comprising:
a process of etching the film by ion sputter etching;
a process of exposing a workpiece to plasma of a first gas containing halogen elements after the process of etching the film;
a process of exposing the workpiece to plasma of a second gas containing carbons after the process of exposing the workpiece to the plas…

Assignees

• Tokyo Electron Ltd

Inventors

• Nishimura Eiichi
• Kushibiki Masato

Classifications

• H01J2237/334

  Electricity · mapped topic

• H10P50/242 Primary

  Electricity · mapped topic

• H01L21/3065 Primary

  Electricity · mapped topic

• C23F4/00 Primary

  Chemistry & Metallurgy · mapped topic

• H10P95/90

  Electricity · mapped topic