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US-12183868-B2 · Dec 31, 2024 · US
Multiple well drain engineering for HV MOS devices
US8962397B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8962397-B2 |
| Application number | US-201213554890-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 20, 2012 |
| Priority date | Jul 25, 2011 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Abstract
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At least one N-well implant having a different doping level is formed in a silicon substrate by first etching the substrate with an alignment target for aligning future process masks thereto. This alignment target is outside of any active device area. By using at least one N-well implant having a different doping level in combination with the substrate, a graded junction in the drift area of a metal oxide semiconductor (MOS) field effect transistor (FET) can be created and a pseudo Ldd structure may be realized thereby.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for fabricating a high voltage (HV) metal oxide semiconductor (MOS) field effect transistor (FET) device, said method comprising the steps of: forming a zero layer ( 222 ) on a P-substrate ( 202 ) by etching an alignment target ( 220 ) on a surface of the P-substrate ( 202 ) and outside of active device areas of the P-substrate ( 202 ); forming a lightly doped N-well ( 204 a ) in a portion of the P-substrate ( 202 ) by implant; forming a doped…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10W46/00Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8962397B2 cover?
- At least one N-well implant having a different doping level is formed in a silicon substrate by first etching the substrate with an alignment target for aligning future process masks thereto. This alignment target is outside of any active device area. By using at least one N-well implant having a different doping level in combination with the substrate, a graded junction in the drift area of a …
- Who is the assignee on this patent?
- Dix Gregory, Mckeen Leighton E, Livingston Ian, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H10W46/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).