Phase change memory stack with treated sidewalls
US-2015318038-A1 · Nov 5, 2015 · US
Methods of forming memory cells
US8962387B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8962387-B2 |
| Application number | US-201314053847-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 15, 2013 |
| Priority date | Jan 20, 2012 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Abstract
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Some embodiments include methods of forming memory cells in which a metal oxide material is formed over a first electrode material, an oxygen-sink material is formed over and directly against the metal oxide material, and a second electrode material is formed over the oxygen-sink material. The second electrode material is of a different composition than the oxygen-sink material. The metal oxide material is treated to transfer oxygen from a region of the metal oxide material to the oxygen-sink material and thereby subdivide the metal oxide material into at least two regions, with one of the regions nearest the oxygen-sink material being relatively oxygen depleted relative to another of the regions.
First claim
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We claim: 1. A method of forming a memory cell, comprising: forming a metal oxide material over a first electrode material; forming an oxygen-sink material over and directly against the metal oxide material; forming a second electrode material over the oxygen-sink material, the second electrode material being of a different composition than the oxygen-sink material; and treating the metal oxide material to substantially irreversibly transfer oxygen from a region of the metal…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L45/145Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8962387B2 cover?
- Some embodiments include methods of forming memory cells in which a metal oxide material is formed over a first electrode material, an oxygen-sink material is formed over and directly against the metal oxide material, and a second electrode material is formed over the oxygen-sink material. The second electrode material is of a different composition than the oxygen-sink material. The metal oxide…
- Who is the assignee on this patent?
- Micron Technology Inc
- What technology area does this patent fall under?
- Primary CPC classification H01L45/145. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).