Resistance change memory device
US-9214626-B2 · Dec 15, 2015 · US
ReRAM device structure
US8962385B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8962385-B2 |
| Application number | US-201414490062-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 18, 2014 |
| Priority date | Apr 9, 2012 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Abstract
Official abstract text for this publication.
A resistive random access memory (ReRAM) includes a first metal layer having a first metal and a metal-oxide layer on the first metal layer. The metal-oxide layer includes the first metal. The ReRAM further includes a second metal layer over the metal-oxide layer and a first continuous conductive barrier layer in physical contact with sidewalls of the first metal layer and of the metal-oxide layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a resistive random access memory (ReRAM) comprising: forming a first opening in a first dielectric layer; forming a continuous barrier layer within the first opening, wherein the continuous barrier layer is in physical contact with a sidewall of the first opening and a bottom of the first opening; forming a first metal layer within the first opening; oxidizing a top portion of the first metal layer to form a metal-oxide layer within…
Assignees
Inventors
Classifications
- H01L45/1633Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10N70/20Primary
Electricity · mapped topic
- H10N70/028Primary
Electricity · mapped topic
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- What does patent US8962385B2 cover?
- A resistive random access memory (ReRAM) includes a first metal layer having a first metal and a metal-oxide layer on the first metal layer. The metal-oxide layer includes the first metal. The ReRAM further includes a second metal layer over the metal-oxide layer and a first continuous conductive barrier layer in physical contact with sidewalls of the first metal layer and of the metal-oxide la…
- Who is the assignee on this patent?
- Freescale Semiconductor Inc
- What technology area does this patent fall under?
- Primary CPC classification H01L45/1633. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).