Solar cell front contact doping
US-2015380600-A1 · Dec 31, 2015 · US
US8962378B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8962378-B2 |
| Application number | US-201213549905-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 16, 2012 |
| Priority date | Jul 16, 2012 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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A method for manufacturing a photodiode including the steps of providing a substrate, solution depositing a quantum nanomaterial layer onto the substrate, the quantum nanomaterial layer including a number of quantum nanomaterials having a ligand coating, and applying a thin-film oxide layer over the quantum nanomaterial layer.
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing a photodiode comprising steps of: providing a substrate comprising germanium; doping said substrate; subjecting said substrate to sulfur passivation; cleaning said substrate after said sulfur passivation; solution depositing a quantum nanomaterial layer onto said substrate, said quantum nanomaterial layer comprising a plurality of quantum nanomaterials, each quantum nanomaterial of said plurality comprising: a core compris…
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