Method of making a reflective shield

US8962375B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8962375-B2
Application numberUS-201314106977-A
CountryUS
Kind codeB2
Filing dateDec 16, 2013
Priority dateApr 16, 2010
Publication dateFeb 24, 2015
Grant dateFeb 24, 2015

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Abstract

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A method of creating a reflective shield for an image sensor device includes depositing a first dielectric layer on a substrate, wherein a photodiode is on the substrate. The method further includes removing surface topography by performing chemical mechanical polishing (CMP) on the first dielectric layer. The method further includes patterning the substrate to define an area on a surface of the first dielectric layer, wherein the area is directly above the photodiode. The method further includes depositing a layer of a material with high reflectivity on the substrate, wherein the material fills the area on the surface of the first dielectric layer. The method further includes removing excess material with high reflectivity, wherein the reflective shield is formed and is embedded in the first dielectric layer. The method further includes depositing a second dielectric material on the substrate, wherein the second dielectric material covers the reflective shield.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of creating a reflective shield for an image sensor device, comprising: depositing a first dielectric layer on a substrate, wherein a photodiode is on the substrate, and the first dielectric layer is in contact with the photodiode; removing surface topography of the substrate by performing chemical mechanical polishing (CMP) on the first dielectric layer; patterning the substrate to define an area on a surface of the first dielectric layer after…

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What does patent US8962375B2 cover?
A method of creating a reflective shield for an image sensor device includes depositing a first dielectric layer on a substrate, wherein a photodiode is on the substrate. The method further includes removing surface topography by performing chemical mechanical polishing (CMP) on the first dielectric layer. The method further includes patterning the substrate to define an area on a surface of th…
Who is the assignee on this patent?
Taiwan Semiconductor Mfg
What technology area does this patent fall under?
Primary CPC classification H10F39/8067. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).