Image sensor device
US-2024038804-A1 · Feb 1, 2024 · US
US8962375B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8962375-B2 |
| Application number | US-201314106977-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 16, 2013 |
| Priority date | Apr 16, 2010 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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A method of creating a reflective shield for an image sensor device includes depositing a first dielectric layer on a substrate, wherein a photodiode is on the substrate. The method further includes removing surface topography by performing chemical mechanical polishing (CMP) on the first dielectric layer. The method further includes patterning the substrate to define an area on a surface of the first dielectric layer, wherein the area is directly above the photodiode. The method further includes depositing a layer of a material with high reflectivity on the substrate, wherein the material fills the area on the surface of the first dielectric layer. The method further includes removing excess material with high reflectivity, wherein the reflective shield is formed and is embedded in the first dielectric layer. The method further includes depositing a second dielectric material on the substrate, wherein the second dielectric material covers the reflective shield.
Opening claim text (preview).
What is claimed is: 1. A method of creating a reflective shield for an image sensor device, comprising: depositing a first dielectric layer on a substrate, wherein a photodiode is on the substrate, and the first dielectric layer is in contact with the photodiode; removing surface topography of the substrate by performing chemical mechanical polishing (CMP) on the first dielectric layer; patterning the substrate to define an area on a surface of the first dielectric layer after…
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