MEMS device with release aperture

US8962367B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8962367-B2
Application numberUS-201414225733-A
CountryUS
Kind codeB2
Filing dateMar 26, 2014
Priority dateOct 21, 2010
Publication dateFeb 24, 2015
Grant dateFeb 24, 2015

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Abstract

Official abstract text for this publication.

The present disclosure provides a method of fabricating a micro-electro-mechanical systems (MEMS) device. In an embodiment, a method includes providing a substrate including a first sacrificial layer, forming a micro-electro-mechanical systems (MEMS) structure above the first sacrificial layer, and forming a release aperture at substantially a same level above the first sacrificial layer as the MEMS structure. The method further includes forming a second sacrificial layer above the MEMS structure and within the release aperture, and forming a first cap over the second sacrificial layer and the MEMS structure, wherein a leg of the first cap is disposed between the MEMS structure and the release aperture. The method further includes removing the first sacrificial layer, removing the second sacrificial layer through the release aperture, and plugging the release aperture. A MEMS device formed by such a method is also provided.

First claim

Opening claim text (preview).

What is claimed is: 1. A method, comprising: providing a substrate including a first sacrificial layer; forming a micro-electro-mechanical systems (MEMS) structure above the first sacrificial layer; forming a first release aperture at substantially a same level above the first sacrificial layer as the MEMS structure; forming a second sacrificial layer above the MEMS structure and within the first release aperture; forming a first cap over the second sacrificial layer and t…

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What does patent US8962367B2 cover?
The present disclosure provides a method of fabricating a micro-electro-mechanical systems (MEMS) device. In an embodiment, a method includes providing a substrate including a first sacrificial layer, forming a micro-electro-mechanical systems (MEMS) structure above the first sacrificial layer, and forming a release aperture at substantially a same level above the first sacrificial layer as the…
Who is the assignee on this patent?
Taiwan Semiconductor Mfg
What technology area does this patent fall under?
Primary CPC classification B81B7/0058. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).