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US-2024287680-A1 · Aug 29, 2024 · US
Method for depositing dielectric films
US8962078B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8962078-B2 |
| Application number | US-201213531397-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 22, 2012 |
| Priority date | Jun 22, 2012 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Abstract
Official abstract text for this publication.
A method is provided for depositing a dielectric film on a substrate. According to one embodiment, the method includes providing the substrate in a process chamber, exposing the substrate to a gaseous precursor to form an adsorbed layer on the substrate, exposing the adsorbed layer to an oxygen-containing gas, a nitrogen-containing gas, or an oxygen- and nitrogen-containing gas, or a combination thereof, to form the dielectric film on the substrate, generating a hydrogen halide gas in the process chamber by a decomposition reaction of a hydrogen halide precursor gas, and exposing the dielectric film to the hydrogen halide gas to remove contaminants from the dielectric film.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for depositing a dielectric film on a substrate, comprising: providing the substrate in a process chamber; exposing the substrate to a gaseous precursor to form an adsorbed layer on the substrate; exposing the adsorbed layer to an oxygen-containing gas, a nitrogen-containing gas, or an oxygen- and nitrogen-containing gas, or a combination thereof, to form the dielectric film on the substrate; generating a hydrogen halide gas in the process cha…
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Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
- C23C16/34Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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Frequently asked questions
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- What does patent US8962078B2 cover?
- A method is provided for depositing a dielectric film on a substrate. According to one embodiment, the method includes providing the substrate in a process chamber, exposing the substrate to a gaseous precursor to form an adsorbed layer on the substrate, exposing the adsorbed layer to an oxygen-containing gas, a nitrogen-containing gas, or an oxygen- and nitrogen-containing gas, or a combinatio…
- Who is the assignee on this patent?
- Clark Robert D, Tokyo Electron Ltd
- What technology area does this patent fall under?
- Primary CPC classification C23C16/34. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).