Dry etching method for metal film

US8961805B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8961805-B2
Application numberUS-201213656178-A
CountryUS
Kind codeB2
Filing dateOct 19, 2012
Priority dateOct 20, 2011
Publication dateFeb 24, 2015
Grant dateFeb 24, 2015

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  2. Abstract

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  5. First independent claim

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Abstract

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A method for performing dry etching on a metal film containing Pt via a mask layer includes performing dry etching on the metal film by generating a plasma of an etching gas including a gaseous mixture of H 2 gas, CO 2 gas, methane gas and rare gas. With the dry etching method, it is possible to make a vertical sidewall of a hole or trench more vertical without using a halogen gas.

First claim

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What is claimed is: 1. A method for performing dry etching on a metal film containing Pt via a mask layer, comprising: performing dry etching on the metal film by generating a plasma of an etching gas including a gaseous mixture consisting essentially of H 2 gas, CO 2 gas, methane gas and a rare gas, wherein the etching gas contains neither a halogen gas nor CO gas. 2. The method of claim 1 , wherein the metal film includes Pt and Mn.…

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What does patent US8961805B2 cover?
A method for performing dry etching on a metal film containing Pt via a mask layer includes performing dry etching on the metal film by generating a plasma of an etching gas including a gaseous mixture of H 2 gas, CO 2 gas, methane gas and rare gas. With the dry etching method, it is possible to make a vertical sidewall of a hole or trench more vertical without using a halogen gas.
Who is the assignee on this patent?
Tokyo Electron Ltd
What technology area does this patent fall under?
Primary CPC classification C23F4/00. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).