Method for making microstructure on substrate
US-2015376777-A1 · Dec 31, 2015 · US
US8961805B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8961805-B2 |
| Application number | US-201213656178-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 19, 2012 |
| Priority date | Oct 20, 2011 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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A method for performing dry etching on a metal film containing Pt via a mask layer includes performing dry etching on the metal film by generating a plasma of an etching gas including a gaseous mixture of H 2 gas, CO 2 gas, methane gas and rare gas. With the dry etching method, it is possible to make a vertical sidewall of a hole or trench more vertical without using a halogen gas.
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What is claimed is: 1. A method for performing dry etching on a metal film containing Pt via a mask layer, comprising: performing dry etching on the metal film by generating a plasma of an etching gas including a gaseous mixture consisting essentially of H 2 gas, CO 2 gas, methane gas and a rare gas, wherein the etching gas contains neither a halogen gas nor CO gas. 2. The method of claim 1 , wherein the metal film includes Pt and Mn.…
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