Semiconductor device and method of manufacturing same
US-2024395697-A1 · Nov 28, 2024 · US
US8961803B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-8961803-B1 |
| Application number | US-201414327449-A |
| Country | US |
| Kind code | B1 |
| Filing date | Jul 9, 2014 |
| Priority date | Sep 17, 2013 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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A method is provided for treating a surface of a porous material in an environment, the method comprising the steps of contacting a porous material with an organic gas in an environment having a pressure P1 and a temperature T1, wherein the organic gas is such that at the pressure P1 and at the temperature T1 it remains a gas when outside of the porous material but condenses as an organic liquid when in contact with the porous material, thereby filling pores of the porous material with the organic liquid, cooling down the filled porous material to a temperature T2 such that the organic liquid freezes within the pores, thereby sealing the pores with an organic solid, thereby providing a protected porous material, and performing a treatment on the surface.
Opening claim text (preview).
What is claimed is: 1. A method for treating a surface of a porous material in an environment, the method comprising: I. contacting a porous material with an organic gas in an environment having a pressure P1 and a temperature T1, wherein the organic gas is such that at the pressure P1 and at the temperature T1 it remains a gas when outside of the porous material but condenses as an organic liquid when in contact with the porous material, thereby filling pores of the porous materi…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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