Sensing circuit of a micro-electromechanical sensor
US-2024345125-A1 · Oct 17, 2024 · US
US8960003B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8960003-B2 |
| Application number | US-201213353059-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 18, 2012 |
| Priority date | Sep 16, 2011 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A Micro-Electro-Mechanical System (MEMS) device includes a sensing element, and a proof mass over and overlapping at least a portion of the sensing element. The proof mass is configured to be movable toward the sensing element. A protection region is formed between the sensing element and the proof mass. The protection region overlaps a first portion of the sensing element, and does not overlap a second portion of the sensing element, wherein the first and the second portions overlap the proof mass.
Opening claim text (preview).
What is claimed is: 1. A device comprising: a Micro-Electro-Mechanical System (MEMS) device comprising: a sensing element; a proof mass over and overlapping at least a portion of the sensing element, wherein the proof mass is configured to be movable toward the sensing element; and a protection region between the sensing element and the proof mass, wherein the protection region overlaps a first portion of the sensing element, and does not overlap a second portion of the sensing element, and wherein the first and the second portions overlap the proof mass, and wherein the protection region is formed of a material, wherein the material is disposed to regions overlapping a corner region of the proof mass, and wherein none of the material overlaps a center region of the proof mass. 2. The device of claim 1 , wherein the protection region is formed of a material, wherein the material is disposed to regions overlapping a corner region of the proof mass, and wherein none of the material overlaps an edge region of the proof mass. 3. The device of claim 1 , wherein the protection region has a greater hardness than the sensing element. 4. The device of claim 1 , wherein the sensing element comprises aluminum copper, and wherein the protection region comprises a metal nitride. 5. The device of claim 1 , wherein the sensing element comprises aluminum copper, and wherein the protection region comprises an oxide or silicon nitride. 6. The device of claim 1 , wherein the proof mass comprises silicon. 7. A device comprising: a Micro-Electro-Mechanical System (MEMS) device comprising: a sensing element comprising aluminum; a proof mass comprising silicon, wherein the proof mass, the sensing element, and an air-gap between the sensing element and the proof mass form a capacitor of the MEMS device; and a plurality of protection regions in contact with the sensing element and between the sensing element and the proof mass, wherein the plurality of the protection regions overlaps regions selected from the group consisting essentially of edge regions of the proof mass and corner regions of the proof mass, and wherein no protection region is formed to overlap a center region of the proof mass. 8. The device of claim 7 , wherein the sensing element comprises aluminum copper, and the proof mass comprises silicon, and wherein the plurality of protection regions has a greater hardness than aluminum copper. 9. The device of claim 7 , wherein the plurality of the protection regions overlaps the corner regions of the proof mass. 10. The device of claim 7 , wherein the plurality of the protection regions overlaps the edge regions of the proof mass. 11. The device of claim 7 , wherein the plurality of the protection regions is formed of a material selected from the group consisting essentially of a metal nitride, an oxide, and titanium tungsten. 12. The device of claim 11 , wherein the plurality of the protection regions is formed of titanium nitride.
Electric condenser making · CPC title
using variation of distance between electrodes · CPC title
by capacitive pick-up · CPC title
using stopper structures for limiting the travel of the seismic mass · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.