Transistor contacts and methods of forming the same
US-2024395871-A1 · Nov 28, 2024 · US
Germanium FinFETs having dielectric punch-through stoppers
US8957477B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8957477-B2 |
| Application number | US-201113272994-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 13, 2011 |
| Priority date | May 6, 2008 |
| Publication date | Feb 17, 2015 |
| Grant date | Feb 17, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A method of forming a semiconductor structure includes providing a composite substrate, which includes a bulk silicon substrate and a silicon germanium (SiGe) layer over and adjoining the bulk silicon substrate. A first condensation is performed to the SiGe layer to form a condensed SiGe layer, so that the condensed SiGe layer has a substantially uniform germanium concentration. The condensed SiGe layer and a top portion of the bulk silicon substrate are etched to form a composite fin including a silicon fin and a condensed SiGe fin over the silicon fin. The method further includes oxidizing a portion of the silicon fin; and performing a second condensation to the condensed SiGe fin.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor structure comprising: a semiconductor substrate; a germanium fin over the semiconductor substrate; and an insulator having at least a portion underlying and adjoining the germanium fin, wherein the insulator comprises: a first portion overlapped by and adjoining the germanium fin, the first portion having a first bottom surface; and a second portion adjoining the first portion, wherein a vertical center of the second portion is offset…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8957477B2 cover?
- A method of forming a semiconductor structure includes providing a composite substrate, which includes a bulk silicon substrate and a silicon germanium (SiGe) layer over and adjoining the bulk silicon substrate. A first condensation is performed to the SiGe layer to form a condensed SiGe layer, so that the condensed SiGe layer has a substantially uniform germanium concentration. The condensed S…
- Who is the assignee on this patent?
- Chang Cheng-Hung, Hsu Yu-Rung, Lee Chen-Yi, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification H10D30/024. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 17 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).