Semiconductor device manufacturing method and semiconductor device manufactured using the same
US-2024395745-A1 · Nov 28, 2024 · US
US8957359B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8957359-B2 |
| Application number | US-201213651092-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 12, 2012 |
| Priority date | Oct 12, 2012 |
| Publication date | Feb 17, 2015 |
| Grant date | Feb 17, 2015 |
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Embodiments of the invention describe providing a compact solution to provide high dynamic range imaging (HDRI or simply HDR) for an imaging pixel by utilizing a control node for resetting a floating diffusion node to a reference voltage value and for selectively transferring an image charge from a photosensitive element to a readout node. Embodiments of the invention further describe control node to have to a plurality of different capacitance regions to selectively increase the overall capacitance of the floating diffusion node. This variable capacitance of the floating diffusion node increases the dynamic range of the imaging pixel, thereby providing HDR for the host imaging system, as well as increasing the signal-to-noise ratio (SNR) of the imaging system.
Opening claim text (preview).
The invention claimed is: 1. An imaging sensor pixel comprising: a floating diffusion (FD) region; a photosensitive element to acquire an image charge; a reset transistor to store the image charge; a transfer gate to selectively transfer the image charge from the photosensitive element to the FD region; and a reset gate node coupled to the FD region to control the transfer of the image charge to a readout node, the reset gate node to reset the FD region to a reference volt…
Electricity · mapped topic
Electricity · mapped topic
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