Semiconductor devices and methods of manufacturing
US-12166025-B2 · Dec 10, 2024 · US
Debonding temporarily bonded semiconductor wafers
US8950459B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8950459-B2 |
| Application number | US-201213662307-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 26, 2012 |
| Priority date | Apr 16, 2009 |
| Publication date | Feb 10, 2015 |
| Grant date | Feb 10, 2015 |
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Abstract
Official abstract text for this publication.
Described methods and apparatus provide a controlled perturbation to an adhesive bond between a device wafer and a carrier wafer. The controlled perturbation, which can be mechanical, chemical, thermal, or radiative, facilitates the separation of the two wafers without damaging the device wafer. The controlled perturbation initiates a crack either within the adhesive joining the two wafers, at an interface within the adhesive layer (such as between a release layer and the adhesive), or at a wafer/adhesive interface. The crack can then be propagated using any of the foregoing methods, or combinations thereof, used to initiate the crack.
First claim
Opening claim text (preview).
What is claimed is: 1. A system for debonding a device wafer from a carrier wafer, the device wafer temporarily bonded to the carrier wafer, the system comprising: a wafer support structure configured for holding a wafer stack comprising the carrier wafer temporarily bonded to the device wafer by an adhesive layer; a crack initiator configured to initiate a crack in the adhesive layer by introducing a controlled perturbation with a tip of the crack initiator near an edge of the…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8950459B2 cover?
- Described methods and apparatus provide a controlled perturbation to an adhesive bond between a device wafer and a carrier wafer. The controlled perturbation, which can be mechanical, chemical, thermal, or radiative, facilitates the separation of the two wafers without damaging the device wafer. The controlled perturbation initiates a crack either within the adhesive joining the two wafers, at …
- Who is the assignee on this patent?
- Suss Microtec Lithography Gmbh
- What technology area does this patent fall under?
- Primary CPC classification H10P72/74. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).