Method of making an organic thin film transistor

Patent metadata

Field	Value
Publication number	US-8946685-B2
Application number	US-201013258671-A
Country	US
Kind code	B2
Filing date	Apr 13, 2010
Priority date	Apr 16, 2009
Publication date	Feb 3, 2015
Grant date	Feb 3, 2015

Abstract

A method of forming an organic thin film transistor the method comprising:
seeding a surface outside a channel region with one or more crystallization sites prior to deposition of the organic semiconductor; depositing a solution of the organic semiconductor onto the seeded surface and over the channel region whereby the organic semiconductor begins forming a crystal domain at the or each of the crystallization sites, the or each crystal domain growing from its crystallization site across the channel region in a direction determined by an advancing surface evaporation front; and applying energy to control the direction and rate of movement of the surface evaporation front thereby controlling the direction and rate of growth of the or each crystal domain across the channel region from the one or more crystallization sites outside the channel region.

First claim

The invention claimed is:

1. An organic thin film transistor comprising:
source and drain electrodes with a channel region therebetween;
a gate electrode;
a dielectric layer disposed between the source and drain electrodes and the gate electrode; and
an organic semiconductor layer,
wherein a surface outside the channel region comprises one or more sites for initiating crystallization and the organic semiconductor layer is disposed over the one or more sites and the channel region between the source and drain electrodes, the organic semiconductor layer comprising one or more crystal domains which extend from the one or more crystallization sites across the entire length of the channel region between and over the source and drain electrodes.

2. An organic thin film transistor according to claim 1 , wherein the one or more sites for initiating crystallization are provided on either a source electrode side or a drain electrode side of the channel region, or both.

3. An organic thin film transistor according to claim 2 , wherein the one or more sites for initiating crystallization are provided over, or adjacent to, the source electrode, the drain electrode, or both source and drain electrodes.

4. An organic thin film transistor according to claim 1 , wherein the one or more sites for initiating crystallization are provided by a boundary of a de-wetting material, the de-wetting material being de-wetting relative to a surface of the channel region.

5. An organic thin film transistor according to claim 1 , wherein the or each crystal domain has an axis of maximum conductance aligned in a direction plus or minus 20° of an imaginary line perpendicular to both the source and drain electrodes.

6. An organic thin film transistor according to claim 1 , wherein the or each crystal domain consists of a single crystal.

7. An organic light-emissive device comprising an organic thin film transistor according to claim 1 .

8. An organic thin film transistor comprising:
source and drain electrodes with a channel region therebetween;
a gate electrode;
a dielectric layer disposed between the source and drain electrodes and the gate electrode; and
an organic semiconductor layer,
wherein a surface outside the channel region comprises one or more sites for initiating crystallization and the organic semiconductor layer is disposed over the one or more crystallization sites and the channel region between the source and drain electrodes, the organic semiconductor layer comprising one or more crystal domains which extend from the one or more crystallization sites across the entire length of the channel region between and over the source and drain electrodes, wherein the organic semiconductor layer is disposed at least in part over the source and/or drain electrodes.

9. An organic thin film transistor according to claim 8 , wherein the organic thin film transistor is a top-gate transistor.

10. An organic thin film transistor according to claim 8 , wherein the one or more crystallization sites are formed on the source and/or drain electrodes.

Assignees

• Kugler Thomas
• Cambridge Display Tech Ltd

Inventors

• Kugler Thomas

Classifications

• H01L51/0012 Primary

  Electricity · mapped topic

• H10K71/191 Primary

  characterised by provisions for the orientation or alignment of the layer to be deposited · CPC title

• H10K71/12

  using liquid deposition, e.g. spin coating · CPC title

• H10K10/462 Primary

  Insulated gate field-effect transistors [IGFETs] · CPC title

• H10K71/15

  characterised by the solvent used · CPC title