Method of forming interlayer dielectric film above metal gate of semiconductor device

Patent metadata

Field	Value
Publication number	US-8946095-B2
Application number	US-201213660363-A
Country	US
Kind code	B2
Filing date	Oct 25, 2012
Priority date	Oct 25, 2012
Publication date	Feb 3, 2015
Grant date	Feb 3, 2015

Abstract

A method of forming an interlayer dielectric film above a metal gate of a metal oxide semiconductor device comprises forming a metal gate above a semiconductor substrate; and forming the interlayer dielectric film above the metal gate by reacting a silicon-containing compound as precursor and a reactant for oxidizing the silicon-containing compound. The silicon-containing compound has the formula:

Si x (A) y (B) z (C) m (D) n   (I)

wherein x is in the range of from 1 to 9; y+z+m+n is in the range of from 4 to 20; and A, B, C, and D independently represent a functional group connecting with a silicon atom. The functional group is selected from a group consisting of alkyl, alkenyl, alkynyl, aryl, alkylaryl, alkoxyl, alkylcarbonyl, carboxyl, alkylcarbonyloxy, amide, amino, alkylcarbonylamino, —NO 2 , and —CN.

First claim

What is claimed is:

1. A method of forming an interlayer dielectric film above a metal gate of a metal oxide semiconductor device, comprising:
forming a metal gate above a semiconductor substrate; and
forming the interlayer dielectric film above and contacting the metal gate by reacting a silicon-containing compound in vapor form as precursor and a reactant for oxidizing the silicon-containing compound,
wherein the silicon-containing compound has a formula:
Si x (A) y (B) z…

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Chen Li
• Lin Jyh-Nan
• Sun Chin-Feng
• Leu Po-Hsiung
• Liu Ding-I

Classifications

• H10P14/6923

  Electricity · mapped topic

• H10P14/6922

  Electricity · mapped topic

• H10P14/6686

  Electricity · mapped topic

• H10P14/6684

  Electricity · mapped topic

• H10P14/6336

  Electricity · mapped topic