Method of manufacturing a phase change memory device
US-2015364678-A1 · Dec 17, 2015 · US
US8946073B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946073-B2 |
| Application number | US-201313958656-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 5, 2013 |
| Priority date | Dec 18, 2012 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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A phase change memory cell and a method for fabricating the phase change memory cell. The phase change memory cell includes a bottom electrode and a first non-conductive layer. The first non-conductive layer defines a first well, a first electrically conductive liner lines the first well, and the first well is filled with a phase change material in the phase change memory cell.
Opening claim text (preview).
What is claimed is: 1. A method for fabricating a phase change memory cell, the method comprising: forming a bottom electrode; depositing a first non-conductive layer above the bottom electrode; defining a first well in the first non-conductive layer that is positioned directly above the bottom electrode; lining a first electrically conductive liner along at least one wall of the first well such that the first electrically conductive liner partially fills the first well and…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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