Transistor, semiconductor device, and semiconductor structure
US-2024379874-A1 · Nov 14, 2024 · US
Metal-insulator-metal (MIM) capacitor with deep trench (DT) structure and method in a silicon-on-insulator (SOI)
US8946045B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946045-B2 |
| Application number | US-201213457601-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 27, 2012 |
| Priority date | Apr 27, 2012 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A structure forming a metal-insulator-metal (MIM) trench capacitor is disclosed. The structure comprises a multi-layer substrate having a metal layer and at least one dielectric layer. A trench is etched into the substrate, passing through the metal layer. The trench is lined with a metal material that is in contact with the metal layer, which comprises a first node of a capacitor. A dielectric material lines the metal material in the trench. The trench is filled with a conductor. The dielectric material that lines the metal material separates the conductor from the metal layer and the metal material lining the trench. The conductor comprises a second node of the capacitor.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a capacitor structure, said method comprising: forming a substrate comprising: a metal layer; and at least one other layer; forming a trench in said substrate; forming a metal sidewall within said trench such that said metal sidewall is in contact with said metal layer, said metal layer comprising a first node of said capacitor structure; lining said metal sidewall with a dielectric material; and filling said trench with a co…
Assignees
Inventors
Classifications
Electricity · mapped topic
- H10D86/01Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8946045B2 cover?
- A structure forming a metal-insulator-metal (MIM) trench capacitor is disclosed. The structure comprises a multi-layer substrate having a metal layer and at least one dielectric layer. A trench is etched into the substrate, passing through the metal layer. The trench is lined with a metal material that is in contact with the metal layer, which comprises a first node of a capacitor. A dielectric…
- Who is the assignee on this patent?
- Barth Jr John E, Ho Herbert L, Khan Babar A, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10D86/01. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).