Heterojunction bipolar transistor having a germanium raised extrinsic base
US-9209264-B2 · Dec 8, 2015 · US
Methods for forming high gain tunable bipolar transistors
US8946041B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946041-B2 |
| Application number | US-201213534971-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 27, 2012 |
| Priority date | Nov 20, 2009 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Abstract
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Embodiments for forming improved bipolar transistors are provided, manufacturable by a CMOS IC process. The improved transistor comprises an emitter having first and second portions of different depths, a base underlying the emitter having a central portion of a first base width underlying the first portion of the emitter, a peripheral portion having a second base width larger than the first base width partly underlying the second portion of the emitter, and a transition zone of a third base width and lateral extent lying laterally between the first and second portions of the base, and a collector underlying the base. The gain of the transistor is larger than a conventional bipolar transistor made using the same CMOS process. By adjusting the lateral extent of the transition zone, the properties of the improved transistor can be tailored to suit different applications without modifying the underlying CMOS IC process.
First claim
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What is claimed is: 1. A method for forming a bipolar transistor, comprising: providing a semiconductor substrate having a first surface, then in any order; forming in the semiconductor substrate a collector having a first region underlying and separated from the first surface and a second region extending from the first region toward the first surface; forming in the substrate a base having a first region of a first base depth from the first surface and a second region of a s…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8946041B2 cover?
- Embodiments for forming improved bipolar transistors are provided, manufacturable by a CMOS IC process. The improved transistor comprises an emitter having first and second portions of different depths, a base underlying the emitter having a central portion of a first base width underlying the first portion of the emitter, a peripheral portion having a second base width larger than the first ba…
- Who is the assignee on this patent?
- Lin Xin, Blomberg Daniel J, Zuo Jiang-Kai, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10D10/051. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).