Manufacturing method for ldmos integrated device
US-2024339522-A1 · Oct 10, 2024 · US
Replacement channels for semiconductor devices and methods for forming the same using dopant concentration boost
US8946035B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8946035-B2 |
| Application number | US-201213628359-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 27, 2012 |
| Priority date | Sep 27, 2012 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A replacement channel and a method for forming the same in a semiconductor device are provided. A channel area is defined in a substrate which is a surface of a semiconductor wafer or a structure such as a fin formed over the wafer. Portions of the channel region are removed and are replaced with a replacement channel material formed by an epitaxial growth/deposition process to include a first dopant concentration level less than a first dopant concentration level. A subsequent doping operation or operations is then used to boost the average dopant concentration to a level greater than the first dopant concentration level. The replacement channel material is formed to include a gradient in which the upper portion of the replacement channel material has a greater dopant concentration than the lower portion of replacement channel material.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for forming a semiconductor transistor, said method comprising: defining a channel region in a semiconductor substrate by forming a dummy gate material within a singular dielectric material and conterminous with sidewalls comprised entirely of said singular dielectric material, said channel region associated with a transistor; removing channel material from said channel region by successively removing said dummy gate material then said channel mat…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8946035B2 cover?
- A replacement channel and a method for forming the same in a semiconductor device are provided. A channel area is defined in a substrate which is a surface of a semiconductor wafer or a structure such as a fin formed over the wafer. Portions of the channel region are removed and are replaced with a replacement channel material formed by an epitaxial growth/deposition process to include a first …
- Who is the assignee on this patent?
- Taiwan Semiconductor Mfg
- What technology area does this patent fall under?
- Primary CPC classification H10D30/021. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).