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US-2015380221-A1 · Dec 31, 2015 · US
Deposition nozzle and apparatus for thin film deposition process
US8944347B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8944347-B2 |
| Application number | US-201213495889-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 13, 2012 |
| Priority date | Jul 1, 2011 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Abstract
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A deposition nozzle and a deposition apparatus include a nozzle body, a precursor passageway formed at a central region of the nozzle body for a precursor gas to be sprayed on the substrate such that the precursor gas reacts with a surface of the substrate, an extraction passageway formed in the nozzle body and located at a peripheral side of the precursor passageway, and extracting residues after the precursor gas reacts with the surface of the substrate, and an air curtain passageway formed in the nozzle body and located at a peripheral side of the extraction passageway for isolating gas to be sprayed on the substrate so as to form a closed gas flow field enclosing a process reaction region between a substrate carrier and the deposition nozzle such that the residues after the precursor gas reacts with the surface of the substrate do not leak.
First claim
Opening claim text (preview).
What is claimed is: 1. A deposition nozzle, comprising: a nozzle body; a precursor passageway formed at a central region of the nozzle body, for a precursor gas flow to be sprayed via the precursor passageway on a substrate such that the precursor gas reacts with a surface of the substrate; an extraction passageway formed at a peripheral side of the precursor passageway of the nozzle body, for extracting residues after the precursor gas reacts with the surface of the substrate…
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Classifications
Chemistry & Metallurgy · mapped topic
- C23C16/45551Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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Frequently asked questions
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- What does patent US8944347B2 cover?
- A deposition nozzle and a deposition apparatus include a nozzle body, a precursor passageway formed at a central region of the nozzle body for a precursor gas to be sprayed on the substrate such that the precursor gas reacts with a surface of the substrate, an extraction passageway formed in the nozzle body and located at a peripheral side of the precursor passageway, and extracting residues af…
- Who is the assignee on this patent?
- Huang Jen-Rong, Ind Tech Res Inst
- What technology area does this patent fall under?
- Primary CPC classification C23C16/45551. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).