Manufacturing method of semiconductor device
US-2015340505-A1 · Nov 26, 2015 · US
US8944003B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8944003-B2 |
| Application number | US-201213679453-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 16, 2012 |
| Priority date | Nov 16, 2012 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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A system and method for generating and using plasma is provided. An embodiment comprises a plasma generating unit that comprises beta-phase aluminum oxide. A precursor material is introduced to the plasma generating unit and a plasma is induced from the precursor material. The plasma may be used to deposit or etch materials on a semiconductor substrate.
Opening claim text (preview).
What is claimed is: 1. A remote plasma system comprising: an inlet port; an inner housing coupled to the inlet port to generate a plasma, the inner housing comprising beta-phase aluminum oxide; and an outlet port coupled to the inner housing. 2. The remote plasma system of claim 1 , further comprising a deposition chamber coupled to the outlet port. 3. The remote plasma system of claim 2 , wherein the deposition chamber further compr…
Electricity · mapped topic
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