Remote plasma system and method

US8944003B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8944003-B2
Application numberUS-201213679453-A
CountryUS
Kind codeB2
Filing dateNov 16, 2012
Priority dateNov 16, 2012
Publication dateFeb 3, 2015
Grant dateFeb 3, 2015

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Abstract

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A system and method for generating and using plasma is provided. An embodiment comprises a plasma generating unit that comprises beta-phase aluminum oxide. A precursor material is introduced to the plasma generating unit and a plasma is induced from the precursor material. The plasma may be used to deposit or etch materials on a semiconductor substrate.

First claim

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What is claimed is: 1. A remote plasma system comprising: an inlet port; an inner housing coupled to the inlet port to generate a plasma, the inner housing comprising beta-phase aluminum oxide; and an outlet port coupled to the inner housing. 2. The remote plasma system of claim 1 , further comprising a deposition chamber coupled to the outlet port. 3. The remote plasma system of claim 2 , wherein the deposition chamber further compr…

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What does patent US8944003B2 cover?
A system and method for generating and using plasma is provided. An embodiment comprises a plasma generating unit that comprises beta-phase aluminum oxide. A precursor material is introduced to the plasma generating unit and a plasma is induced from the precursor material. The plasma may be used to deposit or etch materials on a semiconductor substrate.
Who is the assignee on this patent?
Chen Fei-Fan, Wu Wen-Sheng, Huang Chien Kuo, and 1 more
What technology area does this patent fall under?
Primary CPC classification H01L21/465. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).