Imaging element and imaging device
US-2024388815-A1 · Nov 21, 2024 · US
Apparatus and method for reducing cross talk in image sensors
US8941204B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8941204-B2 |
| Application number | US-201213458827-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 27, 2012 |
| Priority date | Apr 27, 2012 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
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Abstract
Official abstract text for this publication.
A method for reducing cross talk in image sensors comprises providing a backside illuminated image sensor wafer, forming an isolation region in the backside illuminated image sensor wafer, wherein the isolation region encloses a photo active region, forming an opening in the isolation region from a backside of the backside illuminated image sensor wafer and covering an upper terminal of the opening with a dielectric material to form an air gap embedded in the isolation region of the backside illuminated image sensor wafer.
First claim
Opening claim text (preview).
What is claimed is: 1. An apparatus comprising: a substrate having a first side and a second side, wherein the first side is adjacent to a photo active region; an isolation region disposed adjacent to the photo active region in the first side of the substrate; an air gap embedded in the isolation region, wherein the air gap is encapsulated by a dielectric material, and wherein the air gap is adjacent to the second side of the substrate, and wherein a bottom of the air gap is l…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10F39/199Primary
Electricity · mapped topic
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- What does patent US8941204B2 cover?
- A method for reducing cross talk in image sensors comprises providing a backside illuminated image sensor wafer, forming an isolation region in the backside illuminated image sensor wafer, wherein the isolation region encloses a photo active region, forming an opening in the isolation region from a backside of the backside illuminated image sensor wafer and covering an upper terminal of the ope…
- Who is the assignee on this patent?
- Lin Jeng-Shyan, Yaung Dun-Nian, Liu Jen-Cheng, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification H10F39/199. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).