Semiconductor device manufacturing method and semiconductor device manufactured using the same
US-2024395745-A1 · Nov 28, 2024 · US
Image sensors
US8941199B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8941199-B2 |
| Application number | US-201213431306-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 27, 2012 |
| Priority date | Mar 29, 2011 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
An image sensor includes a semiconductor substrate, a plurality of photo detecting elements and a backside protection pattern. The plurality of photo detecting elements may be formed in an upper portion of the semiconductor substrate. The plurality of photo detecting elements may be separate from each other. The backside protection pattern may be formed in a lower portion of the semiconductor substrate between the plurality of photo detecting elements.
First claim
Opening claim text (preview).
What is claimed is: 1. An image sensor, comprising: a plurality of photo detecting elements in an upper portion of a semiconductor substrate, the plurality of photo detecting elements being separate from each other; and a backside protection pattern in a lower portion of the semiconductor substrate between the plurality of photo detecting elements, wherein the backside protection pattern is doped with impurities which have the same conductivity type as a conductivity type of i…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10F39/8063Primary
Electricity · mapped topic
- H01L27/14627Primary
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8941199B2 cover?
- An image sensor includes a semiconductor substrate, a plurality of photo detecting elements and a backside protection pattern. The plurality of photo detecting elements may be formed in an upper portion of the semiconductor substrate. The plurality of photo detecting elements may be separate from each other. The backside protection pattern may be formed in a lower portion of the semiconductor s…
- Who is the assignee on this patent?
- Lee Kyung-Ho, Ahn Jung-Chak, Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10F39/8063. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).