Selective etching of silicon wafer
US-2015357207-A1 · Dec 10, 2015 · US
US8940644B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8940644-B2 |
| Application number | US-201313770282-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 19, 2013 |
| Priority date | Mar 16, 2012 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
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A method for manufacturing a semiconductor substrate product having: providing an etching liquid containing water, a hydrofluoric acid compound and an organic solvent, and applying the etching liquid to a semiconductor substrate, the semiconductor substrate having a silicon layer and a silicon oxide layer, the silicon layer containing an impurity, and thereby selectively etching the silicon oxide layer.
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What is claimed is: 1. A method for manufacturing a semiconductor substrate product comprising: providing an etching liquid containing water, a hydrofluoric acid compound and an organic solvent, and applying the etching liquid to a semiconductor substrate, the semiconductor substrate having at least two silicon layers and a silicon oxide layer, the two silicon layers containing a p-type impurity and a n-type impurity, respectively, the silicon layers and the silicon oxide layer…
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