Methods of forming semiconductor devices
US-2024387699-A1 · Nov 21, 2024 · US
Double patterning strategy for contact hole and trench in photolithography
US8940643B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8940643-B2 |
| Application number | US-201313971600-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 20, 2013 |
| Priority date | Feb 8, 2010 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A method of lithography patterning includes forming a first etch stop layer, a second etch stop layer, and a hard mask layer on a material layer. The materials of the first etch stop layer and the second etch stop layer are selected by the way that there is a material gradient composition between the second etch stop layer, the first etch stop layer, and the material layer. Hence, gradient etching rates between the second etch stop layer, the first etch stop layer, and the material layer are achieved in an etching process to form etched patterns with smooth and/or vertical sidewalls within the second and the first etch stop layers and the material layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A method comprising: forming a material layer overlying a substrate, the material layer having a first silicon concentration; forming a first etch stop layer overlying the material layer, the first etch stop layer having a second silicon concentration; forming a second etch stop layer overlying the first etch stop layer, the second etch stop layer having a third silicon concentration, the second silicon concentration being less than the first silicon con…
Assignees
Inventors
Classifications
- H10P50/73Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8940643B2 cover?
- A method of lithography patterning includes forming a first etch stop layer, a second etch stop layer, and a hard mask layer on a material layer. The materials of the first etch stop layer and the second etch stop layer are selected by the way that there is a material gradient composition between the second etch stop layer, the first etch stop layer, and the material layer. Hence, gradient etch…
- Who is the assignee on this patent?
- Taiwan Semiconductor Mfg
- What technology area does this patent fall under?
- Primary CPC classification H10P50/73. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).