Double patterning with inline critical dimension slimming

US8940475B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8940475-B2
Application numberUS-201113158868-A
CountryUS
Kind codeB2
Filing dateJun 13, 2011
Priority dateNov 23, 2010
Publication dateJan 27, 2015
Grant dateJan 27, 2015

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Abstract

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A method for double patterning a substrate is described. The double patterning method may include a litho/freeze/litho/etch (LFLE) technique that includes a first (critical dimension) CD slimming process to reduce the first CD to a first reduced CD and a second CD slimming process to reduce the second CD to a second reduced CD.

First claim

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The invention claimed is: 1. A method for double patterning a substrate, comprising: forming a first layer of radiation-sensitive material; preparing a first pattern in said first layer of radiation-sensitive material using a first lithographic process, said first pattern being characterized by a first critical dimension (CD); following said preparing said first pattern, performing a first CD slimming process to reduce said first CD to a first reduced CD; freezing said first…

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What does patent US8940475B2 cover?
A method for double patterning a substrate is described. The double patterning method may include a litho/freeze/litho/etch (LFLE) technique that includes a first (critical dimension) CD slimming process to reduce the first CD to a first reduced CD and a second CD slimming process to reduce the second CD to a second reduced CD.
Who is the assignee on this patent?
Dunn Shannon W, Hetzer Dave, Tokyo Electron Ltd
What technology area does this patent fall under?
Primary CPC classification H10P76/4085. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).