Substrate structure, semiconductor device array and semiconductor device having the same

Patent metadata

Field	Value
Publication number	US-8937375-B2
Application number	US-201213468790-A
Country	US
Kind code	B2
Filing date	May 10, 2012
Priority date	Jul 15, 2011
Publication date	Jan 20, 2015
Grant date	Jan 20, 2015

Abstract

A substrate structure has a first surface and a second surface. A plurality of carrying members are formed on the first surface and a plurality of conductive traces are formed on the second surface. In addition, the substrate structure has a first, a second and a third thermal stress relief structures. The first thermal stress relief structure is that lengths of the substrate structure in different axial directions are substantially equal to each other. The second thermal stress relief structure is that a plurality of separated alignment marks are formed on the substrate structure. The third thermal stress relief structure is that the substrate structure has at least one clearance area extending along one of the axial directions of the substrate structure and the clearance area has no carrying members and no conductive traces formed thereon.

First claim

What is claimed is:

1. A substrate structure being laminated by pressing composite materials and metal materials, the substrate structure comprising:
a core layer, made of insulating material having a first surface and a second surface opposite to the first surface;
a plurality of carrying members, made of metal, being formed on the first surface of the core layer for respectively receiving a plurality of semiconductor elements thereon;
a plurality of conductive traces being f…

Assignees

• Lin Chen-Hsiu
• Lite On Electronics Guangzhou
• Lite On Technology Corp

Inventors

• Lin Chen-Hsiu

Classifications

• H10W46/607

  Electricity · mapped topic

• H10W46/301

  Electricity · mapped topic

• H10W46/00

  Electricity · mapped topic

• H10W70/479 Primary

  Electricity · mapped topic

• H10H20/858

  Electricity · mapped topic