Semiconductor die, semiconductor package and substrate dicing method
US-2024421000-A1 · Dec 19, 2024 · US
US8937264B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8937264-B2 |
| Application number | US-201213432949-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 28, 2012 |
| Priority date | Sep 13, 2000 |
| Publication date | Jan 20, 2015 |
| Grant date | Jan 20, 2015 |
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A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.
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What is claimed is: 1. A method of manufacturing a semiconductor device comprising the steps of: irradiating a substrate with laser light comprising a pulsed laser light at a converging point within the substrate, so that the converging point of the pulsed laser light is positioned within the substrate, in order to form a molten processed spot within the substrate at the converging point; performing the irradiating step at multiple locations along each of a plurality of intersec…
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