Semiconductor device and method for manufacturing semiconductor

Patent metadata

Field	Value
Publication number	US-8937013-B2
Application number	US-90742807-A
Country	US
Kind code	B2
Filing date	Oct 12, 2007
Priority date	Oct 17, 2006
Publication date	Jan 20, 2015
Grant date	Jan 20, 2015

Abstract

A method for easily forming a region with conductivity and high wettability without a step for removing a photocatalytic reaction layer, which is formed over a conductive layer, is proposed. The photocatalytic reaction layer is formed over a photocatalytic conductive layer, and the photocatalytic conductive layer is irradiated with ultraviolet light to form a region with conductivity and higher wettability than the photocatalytic reaction layer on a surface of the photocatalytic conductive layer which is irradiated with ultraviolet light. Note that for the photocatalytic conductive layer, a layer having a photocatalytic property of which resistivity is lower than or equal to 1×10 −2 Ω cm can be used.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a photocatalytic conductive layer over a substrate;
forming a reaction layer over the photocatalytic conductive layer; and
irradiating a surface of the photocatalytic conductive layer with ultraviolet light to form a region with conductivity and higher wettability than the reaction layer on the surface of the photocatalytic conductive layer.

2. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode over a substrate;
forming an insulating layer over the gate electrode;
forming a photocatalytic conductive layer over the insulating layer;
forming a reaction layer over the photocatalytic conductive layer,
irradiating a surface of the photocatalytic conductive layer with ultraviolet light to form a region with conductivity and higher wettability than the reaction layer on the surface of the photocatalytic conductive layer;
forming a mask layer by discharging a liquid pattern material into the region with high wettability;
forming a conductive layer by etching the photocatalytic conductive layer with the use of the mask layer; and
forming an organic semiconductor layer to cover at least a part of the conductive layer.

3. A method for manufacturing a semiconductor device, comprising the steps of:
forming a photocatalytic conductive layer over a substrate;
forming a reaction layer over the photocatalytic conductive layer;
irradiating a surface of the photocatalytic conductive layer with ultraviolet light to form a region with conductivity and higher wettability than the reaction layer on the surface of the photocatalytic conductive layer;
forming a layer having a light-emitting substance by discharging a liquid light-emitting material into the region with high wettability; and
forming a conductive layer over the layer having the light-emitting substance.

4. A method for manufacturing a semiconductor device, comprising the steps of:
forming a photocatalytic conductive layer over a substrate;
forming a reaction layer over the photocatalytic conductive layer;
irradiating a surface of the photocatalytic conductive layer with ultraviolet light to form a region with conductivity and higher wettability than the reaction layer on the surface of the photocatalytic conductive layer; and
forming a convex conductive layer by discharging a composition containing a liquid conductive particle into the region with high wettability, baking the discharged composition, and repetition of applying and baking the composition.

5. The method for manufacturing the semiconductor device according to claim 1 , wherein the photocatalytic conductive layer is a layer having a photocatalytic property of which resistivity is lower than or equal to 1×10 −2 Ω cm.

6. The method for manufacturing the semiconductor device according to claim 1 , wherein the photocatalytic conductive layer is formed of one selected from the group consisting of a film containing indium tin oxide, a film including a conductive material containing indium tin oxide mixed with silicon oxide, a fluorine-doped tin oxide film, an antimony-doped tin oxide film, a tin oxide film, a fluorine-doped zinc oxide film, an aluminum-doped zinc oxide film, a gallium-doped zinc oxide film, a boron-doped zinc oxide film, and a zinc oxide film.

7. The method for manufacturing the semiconductor device according to claim 1 , wherein the reaction layer is formed using a composition containing a compound having an alkyl group or a composition containing organic silane.

8. The method for manufacturing the semiconductor device according to claim 2 , wherein the photocatalytic conductive layer is a layer having a photocatalytic property of which resistivity is lower than or equal to 1×10 −2 Ω cm.

9. The method for manufacturing the semiconductor device according to claim 2 , wherein the photocatalytic conductive layer is formed of one selected from the group consisting of a film containing indium tin oxide, a film including a conductive material containing indium tin oxide mixed with silicon oxide, a fluorine-doped tin oxide film, an antimony-doped tin oxide film, a tin oxide film, a fluorine-doped zinc oxide film, an aluminum-doped zinc oxide film, a gallium-doped zinc oxide film, a boron-doped zinc oxide film, and a zinc oxide film.

10. The method for manufacturing the semiconductor device according to claim 2 , wherein the reaction layer is formed using a composition containing a compound having an alkyl group or a composition containing organic silane.

11. The method for manufacturing the semiconductor device according to claim 3 , wherein the photocatalytic conductive layer is a layer having a photocatalytic property of which resistivity is lower than or equal to 1×10 −2 Ω cm.

12. The method for manufacturing the semiconductor device according to claim 3 , wherein the photocatalytic conductive layer is formed of one selected from the group consisting of a film containing indium tin oxide, a film including a conductive material containing indium tin oxide mixed with silicon oxide, a fluorine-doped tin oxide film, an antimony-doped tin oxide film, a tin oxide film, a fluorine-doped zinc oxide film, an aluminum-doped zinc oxide film, a gallium-doped zinc oxide film, a boron-doped zinc oxide film, and a zinc oxide film.

13. The method for manufacturing the semiconductor device according to claim 3 wherein the reaction layer is formed using a composition containing a compound having an alkyl group or a composition containing organic silane.

14. The method for manufacturing the semiconductor device according to claim 4 , wherein the photocatalytic conductive layer is a layer having a photocatalytic property of which resistivity is lower than or equal to 1×10 −2 Ω cm.

15. The method for manufacturing the semiconductor device according to claim 4 , wherein the photocatalytic conductive layer is formed of one selected from the group consisting of a film containing indium tin oxide, a film including a conductive material containing indium tin oxide mixed with silicon oxide, a fluorine-doped tin oxide film, an antimony-doped tin oxide film, a tin oxide film, a fluorine-doped zinc oxide film, an aluminum-doped zinc oxide film, a gallium-doped zinc oxide film, a boron-doped zinc oxide film, and a zinc oxide film.

16. The method for manufacturing the semiconductor device according to claim 4 , wherein the reaction layer is formed using a composition containing a compound having an alkyl group or a composition containing organic silane.

Assignees

• Morisue Masafumi
• Semiconductor Energy Lab

Inventors

• Morisue Masafumi

Classifications

• H01L51/0012 Primary

  Electricity · mapped topic

• H01L51/0529

  Electricity · mapped topic

• H01L51/0005

  Electricity · mapped topic

• H10K10/474

  the gate dielectric comprising a multilayered structure · CPC title

• H10K71/191 Primary

  characterised by provisions for the orientation or alignment of the layer to be deposited · CPC title