Capacitive device
US-2015348964-A1 · Dec 3, 2015 · US
Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate
US8936992B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8936992-B2 |
| Application number | US-201414146198-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 2, 2014 |
| Priority date | Dec 9, 2011 |
| Publication date | Jan 20, 2015 |
| Grant date | Jan 20, 2015 |
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Abstract
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Two trenches having different widths are formed in a semiconductor-on-insulator (SOI) substrate. An oxygen-impermeable layer and a fill material layer are formed in the trenches. The fill material layer and the oxygen-impermeable layer are removed from within a first trench. A thermal oxidation is performed to convert semiconductor materials underneath sidewalls of the first trench into an upper thermal oxide portion and a lower thermal oxide portion, while the remaining oxygen-impermeable layer on sidewalls of a second trench prevents oxidation of the semiconductor materials. After formation of a node dielectric on sidewalls of the second trench, a conductive material is deposited to fill the trenches, thereby forming a conductive trench fill portion and an inner electrode, respectively. The upper and lower thermal oxide portions function as components of dielectric material portions that electrically isolate two device regions.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a semiconductor structure comprising: forming a first trench and a second trench in a semiconductor-on-insulator (SOI) substrate including a stack, from bottom to top of, at least one semiconductor layer, a buried insulator layer, and a top semiconductor layer; providing a contiguous oxygen-impermeable layer on sidewalls of said first trench and second trench in said SOI substrate; depositing a fill material layer on said contiguous o…
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Classifications
Electricity · mapped topic
- H10D1/665Primary
Electricity · mapped topic
- H01L27/1087Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8936992B2 cover?
- Two trenches having different widths are formed in a semiconductor-on-insulator (SOI) substrate. An oxygen-impermeable layer and a fill material layer are formed in the trenches. The fill material layer and the oxygen-impermeable layer are removed from within a first trench. A thermal oxidation is performed to convert semiconductor materials underneath sidewalls of the first trench into an uppe…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H10D1/665. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 20 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).