Read Assist Techniques in a Memory Device
US-2015371686-A1 · Dec 24, 2015 · US
US8934302B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8934302-B2 |
| Application number | US-201213600327-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 31, 2012 |
| Priority date | Oct 31, 2011 |
| Publication date | Jan 13, 2015 |
| Grant date | Jan 13, 2015 |
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A method is provided for operating a nonvolatile memory comprising memory cells stacked on a substrate. The method comprises counting a number of program loops performed in a first program operation of selected memory cells connected to a selected wordline, and controlling an increment of a program voltage between successive program loops of a second program operation of the selected memory cells according to the counted number.
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What is claimed is: 1. A method of operating a nonvolatile memory comprising memory cells stacked on a substrate, the method comprising: counting a number of program loops performed in a first program operation of selected memory cells connected to a selected wordline; and controlling an increment of a program voltage between successive program loops of a second program operation of the selected memory cells according to the counted number. 2. The method of…
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