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Method and apparatus for forming a contact in a cell of a resistive random access memory to reduce a voltage required to program the cell
US8934285B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8934285-B2 |
| Application number | US-201314050720-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 10, 2013 |
| Priority date | Oct 15, 2012 |
| Publication date | Jan 13, 2015 |
| Grant date | Jan 13, 2015 |
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Abstract
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A cell of a resistive random access memory including a resistive element and an access device. The resistive element includes (i) a first electrode and (ii) a second electrode. The access device is configured to select and deselect the cell. The access device includes (i) a first terminal connected to a first contact and (i) a second terminal connected to a second contact. The second contact is connected to the second electrode of the resistive element via a third contact. The third contact includes (i) a first surface in contact with the second contact and (ii) a second surface in contact with the second electrode. The first surface defines a first surface area, and the second surface defines a second surface area. The first surface area is greater than the second surface area.
First claim
Opening claim text (preview).
What is claimed is: 1. A cell of a resistive random access memory, the cell comprising: a resistive element, wherein the resistive element includes (i) a first electrode and (ii) a second electrode; and an access device configured to select and deselect the cell, wherein the access device includes (i) a first terminal connected to a first contact and (i) a second terminal connected to a second contact, and wherein the second contact is connected to the second electrode of the re…
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- G11C13/0007Primary
Physics · mapped topic
Physics · mapped topic
Cross-Sectional Technologies · mapped topic
Physics · mapped topic
Physics · mapped topic
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Frequently asked questions
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- What does patent US8934285B2 cover?
- A cell of a resistive random access memory including a resistive element and an access device. The resistive element includes (i) a first electrode and (ii) a second electrode. The access device is configured to select and deselect the cell. The access device includes (i) a first terminal connected to a first contact and (i) a second terminal connected to a second contact. The second contact is…
- Who is the assignee on this patent?
- Marvell World Trade Ltd
- What technology area does this patent fall under?
- Primary CPC classification G11C13/0007. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Jan 13 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).