Semiconductor device and method for forming a sram memory cell structure
US-2024179884-A1 · May 30, 2024 · US
US8934278B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8934278-B2 |
| Application number | US-201213730487-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 28, 2012 |
| Priority date | Dec 28, 2012 |
| Publication date | Jan 13, 2015 |
| Grant date | Jan 13, 2015 |
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A method within a hybrid ternary content addressable memory (TCAM) includes comparing a first portion of a search word to a first portion of a stored word in a first TCAM stage. The method further includes interfacing an output of the first TCAM stage to an input of the second TCAM stage. The method also includes comparing a second portion of the search word to a second portion of the stored word in a second TCAM stage when the first portion of the search word matches the first portion of the stored word. The first TCAM stage is different from the second TCAM stage.
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What is claimed is: 1. A method within a hybrid ternary content addressable memory (TCAM), the method comprising: comparing a first portion of a search word to a first portion of a stored word in a first TCAM stage; and comparing a second portion of the search word to a second portion of the stored word in a second TCAM stage when the first portion of the search word matches the first portion of the stored word, the first portion of the search word being different than the secon…
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