Semiconductor apparatus
US-9224823-B2 · Dec 29, 2015 · US
Semiconductor element, semiconductor device, and power converter
US8933463B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8933463-B2 |
| Application number | US-201313780876-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 28, 2013 |
| Priority date | Apr 30, 2009 |
| Publication date | Jan 13, 2015 |
| Grant date | Jan 13, 2015 |
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- Title
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Abstract
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A semiconductor element including an MISFET exhibits diode characteristics in a reverse direction through an epitaxial channel layer. The semiconductor element includes: a silicon carbide semiconductor substrate of a first conductivity type, semiconductor layer of the first conductivity type, body region of a second conductivity type, source region of the first conductivity type, epitaxial channel layer in contact with the body region, source electrode, gate insulating film, gate electrode and drain electrode. If the voltage applied to the gate electrode is smaller than a threshold voltage, the semiconductor element functions as a diode wherein current flows from the source electrode to the drain electrode through the epitaxial channel layer. The absolute value of the turn-on voltage of this diode is smaller than the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor device comprising a semiconductor element including a metal-insulator-semiconductor field effect transistor, and a potential setting section for setting a potential at the semiconductor element, wherein the metal-insulator-semiconductor field effect transistor includes: a semiconductor substrate of a first conductivity type; a first silicon carbide semiconductor layer of the first conductivity type, which is arranged on the prin…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D30/635Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8933463B2 cover?
- A semiconductor element including an MISFET exhibits diode characteristics in a reverse direction through an epitaxial channel layer. The semiconductor element includes: a silicon carbide semiconductor substrate of a first conductivity type, semiconductor layer of the first conductivity type, body region of a second conductivity type, source region of the first conductivity type, epitaxial chan…
- Who is the assignee on this patent?
- Adachi Kazuhiro, Kusumoto Osamu, Uchida Masao, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H10D30/635. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 13 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).