Apparatus and electronic devices including transistors comprising two-dimensional materials
US-2024339543-A1 · Oct 10, 2024 · US
US8933445B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8933445-B2 |
| Application number | US-201213726414-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 24, 2012 |
| Priority date | Dec 26, 2011 |
| Publication date | Jan 13, 2015 |
| Grant date | Jan 13, 2015 |
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Provided is a functional thin film having a transparent substrate; a transparent semiconductor layer that is formed on the transparent substrate and contains an oxide transparent in a visible ray region; and an insulating protective film formed on the transparent semiconductor layer, wherein a surface resistance of the transparent semiconductor layer is in a range of from 10 MΩ/□ to 100 MΩ/□.
Opening claim text (preview).
What is claimed is: 1. A functional thin film comprising: a transparent substrate; a transparent semiconductor layer that is formed on the transparent substrate and contains an oxide transparent in a visible ray region; and an insulating protective film formed on the transparent semiconductor layer, wherein a surface resistance of the transparent semiconductor layer is in a range of from 10 MΩ/□ to 100 MΩ/□. 2. The functional thin film of claim 1 , fur…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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