SiC semiconductor device
US-12080760-B2 · Sep 3, 2024 · US
MOS device with low injection diode
US8928079B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8928079-B2 |
| Application number | US-201213610758-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 11, 2012 |
| Priority date | Feb 11, 2005 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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- Title
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Abstract
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A semiconductor device is formed on a semiconductor substrate. The device includes: a drain; an epitaxial layer overlaying the drain, wherein a drain region extends into the epitaxial layer; and an active region. The active region includes: a body disposed in the epitaxial layer, having a body top surface; a source embedded in the body, extending from the body top surface into the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source and into the body; and an active region contact electrode disposed within the active region contact trench. A layer of body region separates the active region contact electrode from the epitaxial layer, and a low injection diode is formed below a body/drain junction.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device formed on a semiconductor substrate, comprising: a drain; an epitaxial layer overlaying the drain, wherein a drain region extends into the epitaxial layer; and an active region comprising: a body disposed in the epitaxial layer, having a body top and a body bottom; a source embedded in the body, extending from the body top into the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench;…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8928079B2 cover?
- A semiconductor device is formed on a semiconductor substrate. The device includes: a drain; an epitaxial layer overlaying the drain, wherein a drain region extends into the epitaxial layer; and an active region. The active region includes: a body disposed in the epitaxial layer, having a body top surface; a source embedded in the body, extending from the body top surface into the body; a gate …
- Who is the assignee on this patent?
- Bhalla Anup, Wang Xiaobin, Pan Ji, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10D30/665. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).