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High operating temperature barrier infrared detector with tailorable cutoff wavelength
US8928036B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8928036-B2 |
| Application number | US-56763509-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 25, 2009 |
| Priority date | Sep 25, 2008 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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Abstract
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A barrier infrared detector with absorber materials having selectable cutoff wavelengths and its method of manufacture is described. A GaInAsSb absorber layer may be grown on a GaSb substrate layer formed by mixing GaSb and InAsSb by an absorber mixing ratio. A GaAlAsSb barrier layer may then be grown on the barrier layer formed by mixing GaSb and AlSbAs by a barrier mixing ratio. The absorber mixing ratio may be selected to adjust a band gap of the absorber layer and thereby determine a cutoff wavelength for the barrier infrared detector. The absorber mixing ratio may vary along an absorber layer growth direction. Various contact layer architectures may be used. In addition, a top contact layer may be isolated into an array of elements electrically isolated as individual functional detectors that may be used in a detector array, imaging array, or focal plane array.
First claim
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What is claimed is: 1. A barrier infrared detector, comprising: a substrate layer comprising GaSb; an entire absorber layer substantially lattice matched to and in direct contact with the substrate layer and comprising a first quaternary alloy of GaInAsSb having an absorber mixing ratio of InAsSb and GaSb of the first quaternary alloy of GaInAsSb; and a barrier layer in direct contact with the absorber layer and comprising a second quaternary alloy of GaAlAsSb having a barrier…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8928036B2 cover?
- A barrier infrared detector with absorber materials having selectable cutoff wavelengths and its method of manufacture is described. A GaInAsSb absorber layer may be grown on a GaSb substrate layer formed by mixing GaSb and InAsSb by an absorber mixing ratio. A GaAlAsSb barrier layer may then be grown on the barrier layer formed by mixing GaSb and AlSbAs by a barrier mixing ratio. The absorber …
- Who is the assignee on this patent?
- Ting David Z, Hill Cory J, Seibel Alexander, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H10F77/1248. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).