Alkyl-substituted allyl carbonyl metal complexes and use thereof for preparing dielectric thin films

Patent metadata

Field	Value
Publication number	US-8927748-B2
Application number	US-201213569906-A
Country	US
Kind code	B2
Filing date	Aug 8, 2012
Priority date	Aug 12, 2011
Publication date	Jan 6, 2015
Grant date	Jan 6, 2015

Abstract

Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted η 3 -allyl)(carbonyl)metal complexes.

First claim

What is claimed is:

1. An organometallic complex represented by Formula IA:

wherein
R 1 , R 2 , and R 3 are independently C 1 -C 8 -alkyl;
x and z are independently zero, 1 or 2;
y is zero or 1; and wherein
at least one of R 1 , R 2 , or R 3 is C 5 -C 8 -alkyl.

2. The complex of claim 1 , wherein at least one of R 1 , R 2 , or R 3 is branched C 5 -C 8 -alkyl.

3. The complex of claim 1 , wherein R 1 or R 2 is neopentyl.

4. The complex of claim 1 , wherein the complex is:

5. A method for forming a metal-containing film by a vapor deposition process, the method comprising delivering to a substrate at least one complex represented by Formula IA:

wherein
R 1 , R 2 , and R 3 are independently C 1 -C 8 -alkyl;
x and z are independently zero, 1 or 2; and
y is zero or 1.

6. The method of claim 5 , wherein x is one; and y and z are each zero.

7. The method of claim 5 , wherein y is one; and x and z are each zero.

8. The method of claim 5 , wherein at least two of x, y and z are one.

9. The method of claim 5 , wherein x, y and z are each one.

10. The method of claim 5 , wherein R 1 , R 2 , and R 3 are independently selected from the group consisting of methyl, ethyl, propyl, isopropyl, butyl, tert-butyl, pentyl, and neopentyl.

11. The method of claim 5 , wherein the at least one complex is:

12. The method of claim 5 , wherein the at least one complex is:

13. The method of claim 5 , wherein the vapor deposition process is chemical vapor deposition.

14. The method of claim 13 , wherein the chemical vapor deposition is liquid injection chemical vapor deposition.

15. The method of claim 5 , wherein the vapor deposition process is atomic layer deposition.

16. The method of claim 15 , wherein the atomic layer deposition is selected from the group consisting of liquid injection atomic layer deposition; pulsed injection atomic layer deposition; and plasma-enhanced atomic layer deposition.

17. The method of claim 5 , wherein the at least one complex is delivered to the substrate in pulses alternating with pulses of an oxygen source to form a metal oxide film.

18. The method of claim 17 , wherein the oxygen source is selected from the group consisting of H 2 O, O 2 and ozone.

19. The method of claim 5 , further comprising delivering to the substrate at least one co-complex to form a mixed-metal oxide film.

20. The method of claim 19 , wherein the mixed-metal oxide film comprises manganese and silicon.

21. The method of claim 5 , further comprising using at least one co-reactant selected from the group consisting of hydrogen, hydrogen plasma, oxygen, air, water, ammonia, hydrazine, an alkyl-substituted hydrazine, a borane, a silane, ozone and a combination thereof.

22. The method of claim 5 , further comprising using an alkyl-substituted hydrazine as a co-reactant.

23. The method of claim 22 , wherein the alkyl-substituted hydrazine is N,N-dimethylhydrazine.

24. The method of claim 5 , wherein the at least one complex is delivered to a substrate selected from the group consisting of silicon, silicon oxide, silicon nitride, tantalum, tantalum nitride, copper, ruthenium, titanium nitride, tungsten, and tungsten nitride.

25. The method of claim 5 , wherein the film formed comprises a manganese-nitride thin film.

26. The method of claim 5 , wherein the method is used for a DRAM or CMOS application.

Assignees

• Odedra Rajesh
• Boag Neil
• Anthis Jeff
• Kanjolia Ravi
• Saly Mark
• Sigma Aldrich Co Llc

Inventors

• Odedra Rajesh
• Boag Neil
• Anthis Jeff
• Kanjolia Ravi
• Saly Mark

Classifications

• H10P14/6939

  characterised by the metal · CPC title

• H10P14/6928

  the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P14/432

  using selective deposition · CPC title