High-k transistors with low threshold voltage

US8927409B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8927409-B2
Application numberUS-201314046218-A
CountryUS
Kind codeB2
Filing dateOct 4, 2013
Priority dateJan 20, 2010
Publication dateJan 6, 2015
Grant dateJan 6, 2015

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Abstract

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An apparatus includes a wafer annealing tool and a plurality of electrodes coupled to the wafer annealing tool, wherein the electrodes are configured to be in physical contact with a wafer so that, when the wafer is annealed, a negative electrical bias is formed across one or more gate stacks of the wafer.

First claim

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The invention claimed is: 1. A method for forming a semiconductor structure, the method comprising: forming a high-k dielectric layer over a semiconductor substrate; forming a gate layer over the high-k dielectric layer, wherein the gate layer initially comprises a material selected from the group consisting of: a conductive material, a non-conductive material, and a combination thereof; heating the gate layer to 350° C., wherein, if the gate layer initially includes the non-c…

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What does patent US8927409B2 cover?
An apparatus includes a wafer annealing tool and a plurality of electrodes coupled to the wafer annealing tool, wherein the electrodes are configured to be in physical contact with a wafer so that, when the wafer is annealed, a negative electrical bias is formed across one or more gate stacks of the wafer.
Who is the assignee on this patent?
IBM
What technology area does this patent fall under?
Primary CPC classification H10D64/01314. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).