Selective deposition of metal oxide
US-2024282572-A1 · Aug 22, 2024 · US
Multi-composition dielectric for semiconductor device
US8927359B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8927359-B2 |
| Application number | US-201313772616-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 21, 2013 |
| Priority date | Feb 21, 2013 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
The present disclosure provides a method of semiconductor device fabrication including forming a multi-composition ILD layer by forming a first portion of an inter-layer dielectric (ILD) layer on a semiconductor substrate; and forming a second portion of an ILD layer on the first portion of the ILD layer. The second portion may have a greater silicon content than the first portion. For example, the second portion may be a silicon rich oxide.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of semiconductor device fabrication, comprising: forming a dummy gate structure on a semiconductor substrate; forming a first portion of an inter-layer dielectric (ILD) layer on semiconductor substrate adjacent the dummy gate structure; and forming a second portion of the ILD layer on the first portion of the ILD layer, wherein the second portion has a greater silicon content than the first portion; after forming the first and second portions…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8927359B2 cover?
- The present disclosure provides a method of semiconductor device fabrication including forming a multi-composition ILD layer by forming a first portion of an inter-layer dielectric (ILD) layer on a semiconductor substrate; and forming a second portion of an ILD layer on the first portion of the ILD layer. The second portion may have a greater silicon content than the first portion. For example,…
- Who is the assignee on this patent?
- Taiwan Semiconductor Mfg
- What technology area does this patent fall under?
- Primary CPC classification H10P14/60. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).