Device and method for continuous vgf crystal growth through rotation after horizontal injection synthesis
US-2019352794-A1 · Nov 21, 2019 · US
Gas flow guiding device for use in crystal-growing furnace
US8926751B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8926751-B2 |
| Application number | US-95846910-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 2, 2010 |
| Priority date | Dec 2, 2010 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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Abstract
Official abstract text for this publication.
The present invention relates to a gas flow guiding device for use in a crystal-growing furnace. The gas flow guiding device has an insulation layer enclosing a crucible, a gas inlet mounted in the upper insulation layer, and a gas exit formed in the lateral insulation layer. A plurality of guide plates are radially arranged around the opening of the gas inlet, so that the free surface of the melt is blown by the guided gas flow in such a manner that the gas flow takes the impurity away from the free surface efficiently. As a result, the crystal ingot obtained by solidifying the melt will exhibit a reduced concentration of impurities and an improved crystal quality.
First claim
Opening claim text (preview).
What is claimed is: 1. A gas flow guiding device for use in a crystal-growing furnace, comprising: a crucible configured to contain a melt; an insulation layer enclosing the crucible and formed with a gas exit; a gas inlet mounted in the insulation layer and having an opening; and coupled with a height-adjusting the gas inlet in terms of a height relative to a crucible; and a plurality of guide plates radially arranged around the opening of the gas inlet and configured to g…
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Cross-Sectional Technologies · mapped topic
- C30B11/006Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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Frequently asked questions
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- What does patent US8926751B2 cover?
- The present invention relates to a gas flow guiding device for use in a crystal-growing furnace. The gas flow guiding device has an insulation layer enclosing a crucible, a gas inlet mounted in the upper insulation layer, and a gas exit formed in the lateral insulation layer. A plurality of guide plates are radially arranged around the opening of the gas inlet, so that the free surface of the m…
- Who is the assignee on this patent?
- Chen Jyh-Chen, Teng Ying-Yang, Lu Chung-Wei, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification C30B11/006. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).