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US-2019352794-A1 · Nov 21, 2019 · US
Method for manufacturing a silicon ingot having uniform phosphorus concentration
US10072350B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10072350-B2 |
| Application number | US-201415022707-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 16, 2014 |
| Priority date | Sep 17, 2013 |
| Publication date | Sep 11, 2018 |
| Grant date | Sep 11, 2018 |
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Abstract
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A method for manufacturing a silicon ingot having uniform phosphorus concentration. The method includes at least the steps of: (i) providing a quasi-uniform molten silicon bath containing at least phosphorus; and (ii) proceeding to the directional solidification of the silicon, wherein a speed (VI) for solidifying the silicon and a rate (JLV) of evaporation of the phosphorus at the liquid/vapor interface of the bath are controlled such that, at each moment of the directional solidification, the following equation is verified: VI=k′/(2−k) (E), wherein k′ is the phosphorus transfer coefficient, and k is the distribution coefficient of the phosphorus in the silicon. Also relates to a silicon ingot having uniform phosphorus concentration across a height of at least 20 cm.
First claim
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The invention claimed is: 1. A process for manufacturing a silicon ingot having a uniform phosphorus concentration, comprising at least the steps consisting in: (i) providing an almost uniform bath of molten silicon comprising at least phosphorus; and (ii) carrying out the directional solidification of the silicon, with a speed of solidification (V I ) of the silicon and a rate of evaporation (J LV ) of the phosphorus at the liquid-vapor interface of the bath which are controlle…
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- C30B11/006Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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- What does patent US10072350B2 cover?
- A method for manufacturing a silicon ingot having uniform phosphorus concentration. The method includes at least the steps of: (i) providing a quasi-uniform molten silicon bath containing at least phosphorus; and (ii) proceeding to the directional solidification of the silicon, wherein a speed (VI) for solidifying the silicon and a rate (JLV) of evaporation of the phosphorus at the liquid/vapor…
- Who is the assignee on this patent?
- Commissariat Energie Atomique, Commissariat Energie Atomique
- What technology area does this patent fall under?
- Primary CPC classification C30B11/006. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Sep 11 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).