Semiconductor device and vehicle

Patent metadata

Field	Value
Publication number	US-2026082945-A1
Application number	US-202519394119-A
Country	US
Kind code	A1
Filing date	Nov 19, 2025
Priority date	May 26, 2023
Publication date	Mar 19, 2026
Grant date	—

Abstract

A semiconductor device includes a first lead including a base portion, a semiconductor element mounted on one side in a thickness direction of the base portion and having a first electrode disposed on the one side in the thickness direction and a second electrode disposed on the other side in the thickness direction, a second lead spaced apart from the base portion in a first direction orthogonal to the thickness direction, a first conductive member including a first portion bonded to the first electrode and a second portion bonded to the second lead and electrically connected to the first electrode and the second lead, a first bonding layer interposed between, and bonded to the base portion and the second electrode, and a second bonding layer interposed between, and bonded to the first electrode and the first portion. The first bonding layer includes a sintered metal.

First claim

1 . A semiconductor device comprising:
a first lead including a base portion; a semiconductor element mounted on one side in a thickness direction of the base portion and having a first electrode disposed on the one side in the thickness direction and a second electrode disposed on the other side in the thickness direction; a second lead spaced apart from the base portion in a first direction orthogonal to the thickness direction; a first conductive member including a first portion bonded to the first electrode and a second portion bonded to the second lead, the first conductive member being electrically connected to the first electrode and the second lead; a first bonding layer interposed between the base portion and the second electrode, and bonded to the base portion and the second electrode; and a second bonding layer interposed between the first electrode and the first portion, and bonded to the first electrode and the first portion, wherein the first bonding layer includes a sintered metal.

2 . The semiconductor device according to claim 1 , wherein the second bonding layer includes a conductive paste.

3 . The semiconductor device according to claim 2 , wherein the second bonding layer includes solder.

4 . The semiconductor device according to claim 1 , further comprising a third bonding layer interposed between the second lead and the second portion, and bonded to the second lead and the second portion.

5 . The semiconductor device according to claim 4 , wherein the third bonding layer includes a conductive paste.

6 . The semiconductor device according to claim 5 , wherein the third bonding layer includes solder.

7 . The semiconductor device according to claim 1 , wherein the first bonding layer has a dimension along the thickness direction smaller than a dimension of the second bonding layer along the thickness direction.

8 . The semiconductor device according to claim 1 , wherein the second lead is elongated in the first direction.

9 . The semiconductor device according to claim 1 , wherein the first conductive member is a plate-shaped metal member.

10 . The semiconductor device according to claim 9 , wherein the first conductive member contains copper.

11 . The semiconductor device according to claim 1 , further comprising: a third lead spaced apart from the base portion and the second lead; and a second conductive member,
wherein the second conductive member is electrically connected to the first electrode and the third lead.

12 . The semiconductor device according to claim 11 , wherein the third lead is spaced apart from the second lead in a second direction orthogonal to the thickness direction and the first direction.

13 . The semiconductor device according to claim 11 , wherein the second conductive member is conductively bonded to the first portion and the third lead.

14 . The semiconductor device according to claim 13 , wherein the second conductive member is a plate-shaped metal member.

15 . The semiconductor device according to claim 13 , wherein the second conductive member is a bonding wire.

16 . The semiconductor device according to claim 11 , further comprising: a fourth lead spaced apart from the base portion in the first direction; and a third conductive member,
wherein the semiconductor element has a third electrode disposed on the one side in the thickness direction, the fourth lead is spaced apart from the third lead in a second direction orthogonal to the thickness direction and the first direction, and the third conductive member is conductively bonded to the third electrode and the fourth lead.

17 . The semiconductor device according to claim 16 , wherein the semiconductor element is a switching element having a drain electrode, a source electrode, and a gate electrode, and
the first electrode is the source electrode, the second electrode is the drain electrode, and the third electrode is the gate electrode.

18 . A vehicle comprising a power converter including the semiconductor device according to claim 17 .

Assignees

• Rohm Co Ltd

Inventors

• FUJISADA Yoshimasa
• Saito Koshun

Classifications

• H10W72/60

  Strap connectors, e.g. thick copper clips for grounding of power devices · CPC title

• H10W72/50

  Bond wires · CPC title

• H10W90/757

  between a chip and a laterally-adjacent lead frame, conducting package substrate or heat sink · CPC title

• H10W90/767

  between a chip and a laterally-adjacent lead frame, conducting package substrate or heat sink · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title