Ldmos transistor in a semiconductor fin

Patent metadata

Field	Value
Publication number	US-2026052726-A1
Application number	US-202418805607-A
Country	US
Kind code	A1
Filing date	Aug 15, 2024
Priority date	Aug 15, 2024
Publication date	Feb 19, 2026
Grant date	—

Abstract

A transistor, such as an LDMOS transistor, includes a drift region located in a carrier path in semiconductor fin between a channel region and a drain region. The transistor includes two gate dielectric structures covering different locations of the semiconductor fin. A thinner gate dielectric structure covers a portion of the channel region directly below the gate of the transistor. The thicker dielectric structure covers a portion of the drift region located directly below the gate. A transition region between the channel region and the drift region in the semiconductor fin is located directly under the gate.

First claim

What is claimed is:

1 . A transistor comprising:
a drain region being of a first net conductivity doping type; a source region being of the first net conductivity doping type; a channel region located in a semiconductor fin in a carrier path between the drain region and the source region, the channel region being of a second net conductivity doping type opposite the first net conductivity doping type; a drift region located in the semiconductor fin being of the first net conductivity doping type, the drift region located in the carrier path between the channel region and the drain region; a gate located directly over a first portion of the semiconductor fin and directly lateral to opposing sidewalls of the first portion of the semiconductor fin; a first gate dielectric structure of a first thickness including a portion located directly over of a first portion of the channel region and directly laterally to opposing sidewalls of the first portion of the channel region, the first portion of the channel region being located in the first portion of the semiconductor fin directly under the gate; a second gate dielectric structure of a second thickness including a portion located directly over a first portion of the drift region and directly lateral to opposing sidewalls of the first portion of the drift region, the first portion of the drift region being located in the first portion of the semiconductor fin directly under the gate, the second thickness is of a thickness designed to be greater than the first thickness.

2 . The transistor of claim 1 wherein the semiconductor fin includes a transition region between the channel region and the drift region, the second gate dielectric structure is located directly over the transition region and directly lateral to opposing sides of the transition region.

3 . The transistor of claim 1 further comprising:
a field plate that is physically noncontiguous with the gate, the field plate is located over a second portion of the semiconductor fin and directly lateral to opposing sidewalls of the second portion of the semiconductor fin, wherein the second gate dielectric structure is located directly between the second portion of the semiconductor fin and the field plate.

4 . The transistor of claim 3 wherein the field plate characterized as a metal field plate.

5 . The transistor of claim 1 wherein the first gate dielectric structure includes a high K dielectric material.

6 . The transistor of claim 1 wherein the first gate dielectric structure and the second gate dielectric structure each include an oxide of semiconductor material of the semiconductor fin.

7 . The transistor of claim 1 wherein the drain region and the source region each include an epitaxially grown semiconductor material including at least a portion located in the semiconductor fin.

8 . The transistor of claim 1 wherein the gate is characterized as a metal gate.

9 . The transistor claim 1 wherein:
the semiconductor fin is located on an integrated circuit;
the integrated circuit includes a second semiconductor fin, the semiconductor fin and the second semiconductor fin each extending in a first lateral direction generally parallel to each other;
the gate is located directly over a first portion of the second semiconductor fin and directly laterally to opposing sidewalls of the first portion of the second semiconductor fin, the first portion of the second semiconductor fin including a second channel region and a portion of a second drift region.

10 . The transistor of claim 1 wherein the second gate dielectric structure includes a portion located directly over a second portion of the channel region and directly lateral to opposing sidewalls of the second portion of the channel region, the gate is located directly over the second portion of the channel region.

11 . A method comprising:
forming a channel region and a drift region in a semiconductor fin, the channel region and the drift region are located in a carrier path between a source region and a drain region, the channel region is located in the carrier path between the source region and the drift region, the drift region is located in the carrier path between the channel region and the drain region, the drift region, the drain region, and the source region are of a first net conductivity dopant type and the channel region is of a second net conductivity dopant type opposite the first net conductivity dopant type; forming a first gate dielectric structure directly over a first portion of the channel region and directly lateral to opposing sidewalls of the first portion of the channel region; forming a second gate dielectric structure directly over the drift region and directly lateral to opposing to sidewalls of the drift region, the second gate dielectric structure having a thickness that is designed to be greater than a thickness of the first gate dielectric structure; forming a gate directly over a first portion of the first gate dielectric structure and directly lateral to sidewalls of the first portion of the first gate dielectric structure and directly over a first portion of the second gate dielectric structure over and directly lateral to opposing sidewalls of the first portion of the second gate dielectric structure, wherein the gate is located directly over a first portion of the drift region.

12 . The method of claim 11 wherein the forming the second gate dielectric structure includes forming the second gate dielectric structure directly over a second portion of the channel region and directly lateral to opposing to sidewalls of the second portion of the channel region, wherein the gate is located directly over the second portion of the channel region.

13 . The method of claim 11 wherein the semiconductor fin includes a transition region between the channel region and the drift region, the transition region is located directly under the second gate dielectric structure.

14 . The method of claim 11 further comprising forming a field plate directly over a second portion of the second gate dielectric structure and directly lateral to opposing sidewalls of the second portion of the second gate dielectric structure, wherein the second portion of the second gate dielectric structure is located directly over a second portion of the drift region and directly lateral to opposing sidewalls of the second portion of the drift region.

15 . The method of claim 11 wherein the first gate dielectric structure includes a high K dielectric material.

16 . The method of claim 11 wherein forming the first gate dielectric structure includes oxidizing material of the semiconductor fin at a location of the first portion of the channel region.

17 . The method of claim 11 wherein forming the second gate dielectric structure includes oxidizing material of the semiconductor fin at a location of the drift region.

18 . The method of claim 11 wherein:
the forming the drain region includes removing material of the semiconductor fin at a location of the drain region and epitaxially growing semiconductor material on the semiconductor fin at the location of the drain region;
the forming the source region includes removing material of the semiconductor fin at a location of the source region and epitaxially growing semiconductor material on the semiconductor fin at the location of the source region.

19 . The method of claim 11 wherein:
the semiconductor fin is located on a wafer, wherein the wafer includes a second semiconductor fin, the semiconduc

Assignees

• Nxp Bv

Inventors

• Dinh Viet Thanh
• Perera Asanga H
• Xie Juan
• Wong Alden C

Classifications

• H10D64/516

  the thicknesses being non-uniform · CPC title

• H10D62/151

  of IGFETs  (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713) · CPC title

• H10D64/111 Primary

  Field plates · CPC title

• H10D30/0281

  of lateral DMOS [LDMOS] FETs · CPC title

• H10D30/024

  of fin field-effect transistors [FinFET] · CPC title