Spin orbit torque based thermal sensor for insitu monitoring of magnetic recording head

US2026050050A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2026050050-A1
Application numberUS-202519366465-A
CountryUS
Kind codeA1
Filing dateOct 22, 2025
Priority dateMar 13, 2023
Publication dateFeb 19, 2026
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present disclosure generally relates to temperature detection devices including a ferromagnetic (FM) material disposed at a media facing surface (MFS). The FM material is configured to produce a first electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect. The temperature detection device may also include a spin-orbit torque (SOT) material abutting the FM material. The SOT material includes at least one of BiSb, a topological insulator, a topological half-Heusler alloy, or a weakly oxidized heavy metal. The SOT material is recessed from the MFS, wherein the SOT material is configured to receive a spin current parallel to the temperature gradient generated by a spin Seebeck effect in the FM material. The spin current is detectable as a second electric voltage signal via an inverse spin Hall effect. The first electric voltage signal is added to the second electric voltage signal.

First claim

Opening claim text (preview).

What is claimed is: 1 . A magnetic recording head, comprising: a read head; and a temperature detection device disposed adjacent to the read head, the temperature detection device comprising: a ferromagnetic (FM) material disposed at a media facing surface (MFS), wherein the FM material has a magnetization direction parallel to the MFS, wherein a temperature gradient of the FM material is perpendicular to the MFS, wherein the FM material is configured to generate an electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect. 2 . The magnetic recording head of claim 1 , wherein the temperature detection device further comprises an antiferromagnetic (AFM) material disposed adjacent to the FM material. 3 . The magnetic recording head of claim 1 , wherein the temperature detection device is configured to read a voltage across the FM material in a cross-track direction. 4 . The magnetic recording head of claim 1 , wherein the temperature detection device further comprises a heat sink, wherein the heat sink is recessed from the MFS. 5 . The magnetic recording head of claim 1 , wherein the FM material has a width, a height, and a thickness, wherein the width of the FM material is greater than the height of the FM material. 6 . The magnetic recording head of claim 1 , wherein the FM material has a width, a height, and a thickness, wherein the width of the FM material is greater than the thickness of the FM material. 7 . A magnetic recording device, comprising the magnetic recording head of claim 1 . 8 . A magnetic recording head, comprising: a ferromagnetic (FM) material disposed at a media facing surface (MFS), wherein the FM material has a magnetization direction parallel to the MFS; and a spin-orbit torque (SOT) material, wherein the SOT material abuts the FM material and is recessed from the MFS. 9 . The magnetic recording head of claim 8 , wherein the SOT material comprises a body portion and an overhang portion, wherein the overhang portion is stacked on the FM material, and the body portion abuts the FM material. 10 . The magnetic recording head of claim 8 , wherein the FM material is configured to produce a first electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect, wherein the SOT material is configured to produce a spin current parallel to the temperature gradient via a spin Seebeck effect, the spin current being detectable as a second electric voltage signal via the inverse spin Hall effect, wherein the first electric voltage signal is added to the second electric voltage signal. 11 . The magnetic recording head of claim 8 , wherein the SOT material comprises a seed layer, a buffer layer disposed on the seed layer, a nucleation layer disposed on the buffer layer, a SOT material sub-layer disposed on the nucleation layer, an interlayer disposed on the SOT material sub-layer, a barrier layer disposed on the interlayer, a cap layer disposed on the barrier layer, and an electrode disposed on the cap layer. 12 . The magnetic recording head of claim 8 , wherein the SOT material comprises a seed layer, a texture layer disposed on the seed layer, a buffer layer disposed on the texture layer, a nucleation layer disposed on the buffer layer, a SOT material sub-layer disposed on the nucleation layer, a first interlayer disposed on the SOT material sub-layer, a second interlayer disposed on the first interlayer, a barrier layer disposed on the second interlayer, and a cap layer disposed on the barrier layer. 13 . The magnetic recording head of claim 8 , wherein the SOT material comprises a seed layer, a texture layer disposed on the seed layer, a buffer layer disposed on the texture layer, a SOT material sub-layer disposed on the buffer layer, an interlayer disposed on the SOT material sub-layer, and a cap layer disposed on the interlayer. 14 . The magnetic recording head of claim 8 , further comprising a read head disposed adjacent to the FM material and the SOT material. 15 . A magnetic recording device, comprising the magnetic recording head of claim 8 . 16 . A magnetic recording head, comprising: a read head; a temperature detection device disposed adjacent to the read head, the temperature detection device comprising: a ferromagnetic (FM) material disposed at a media facing surface (MFS), wherein the FM material has a magnetization direction parallel to the MFS, wherein a temperature gradient of the FM material is perpendicular to the MFS, wherein the FM material is configured to generate an electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect; and a voltage meter coupled to the temperature detection device. 17 . The magnetic recording head of claim 16 , wherein the voltage meter is coupled to the FM material. 18 . The magnetic recording head of claim 16 , wherein the temperature detection device further comprises an antiferromagnetic (AFM) material disposed adjacent to the FM material. 19 . The magnetic recording head of claim 16 , wherein: the FM material has a width, a height, and a thickness, wherein the width of the FM material is greater than the height of the FM material; or the FM material has a width, a height, and a thickness, wherein the width of the FM material is greater than the thickness of the FM material. 20 . The magnetic recording head of claim 16 , wherein the temperature detection device further comprises a heat sink, wherein the heat sink is recessed from the MFS. 21 . A magnetic recording device, comprising the magnetic recording head of claim 16 .

Assignees

Inventors

Classifications

  • using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00) · CPC title

  • Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips (devices based on galvano-magnetic effect or the like H10N50/85) · CPC title

  • G01R33/075Primary

    Hall devices configured for spinning current measurements · CPC title

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What does patent US2026050050A1 cover?
The present disclosure generally relates to temperature detection devices including a ferromagnetic (FM) material disposed at a media facing surface (MFS). The FM material is configured to produce a first electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect. The temperature detection device may also include a spin-orbit torque (SOT) material abutting t…
Who is the assignee on this patent?
Western Digital Tech Inc, Inst Of Science Tokyo
What technology area does this patent fall under?
Primary CPC classification G01R33/0052. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu Feb 19 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).