Dual-mode photodetector pixel circuit

Patent metadata

Field	Value
Publication number	US-2026046535-A1
Application number	US-202418801484-A
Country	US
Kind code	A1
Filing date	Aug 12, 2024
Priority date	Aug 12, 2024
Publication date	Feb 12, 2026
Grant date	—

Abstract

A photodetector pixel circuit includes a phototransistor which includes a photovoltaic junction, wherein the photovoltaic junction generates a junction current in response to received light, the level of the junction current being related to the intensity of the light; and a storage capacitor, coupled to the phototransistor for detecting the intensity of the light. In a phototransistor mode, the storage capacitor is configured to integrate an amplified current, generated by the phototransistor amplifying the junction current with a phototransistor current gain which is larger than 1, to generate a light intensity signal representing the intensity of the light. In a photodiode mode, the storage capacitor is configured to integrate the junction current to generate the light intensity signal.

First claim

What is claimed is:

1 . A photodetector pixel circuit, comprising:
a phototransistor, including a photovoltaic junction, wherein the photovoltaic junction generates a junction current in response to received light, the level of the junction current being related to the intensity of the light; and a storage capacitor, coupled to the phototransistor for detecting the intensity of the light; wherein in a phototransistor mode, the storage capacitor is configured to integrate an amplified current, generated by the phototransistor amplifying the junction current with a phototransistor current gain which is larger than 1, to generate a light intensity signal representing the intensity of the light, wherein in a photodiode mode, the storage capacitor is configured to integrate the junction current to generate the light intensity signal.

2 . The photodetector pixel circuit of claim 1 , wherein for generating the light intensity signal in response to a same light intensity, a first integration time is required in the phototransistor mode and a second integration time is required in the photodiode mode, wherein a ratio between the second integration time to the first integration time is greater than 1 and is related to the phototransistor current gain.

3 . The photodetector pixel circuit of claim 1 , wherein a signal-to-noise ratio (SNR) of the light intensity signal is higher in the photodiode mode than in the phototransistor mode.

4 . The photodetector pixel circuit of claim 1 , wherein the phototransistor is a photovoltaic bipolar-junction-transistor (BJT), wherein the photovoltaic junction corresponds to a base-collector junction of the photovoltaic BJT, wherein the junction current corresponds to a base current flowing through the base of the photovoltaic BJT, wherein the amplified current corresponds to an emitter current flowing through the emitter of the photovoltaic BJT.

5 . The photodetector pixel circuit of claim 1 , further comprising:
a swap switch, configured to conduct the junction current to integrate the storage capacitor in the photodiode mode.

6 . The photodetector pixel circuit of claim 5 , further comprising:
an amplifier circuit, configured to, in the phototransistor mode, amplify a voltage at the base of the photovoltaic BJT to regulate a voltage at the emitter of the photovoltaic BUT to a level, whereby the photovoltaic BJT is biased in an active region to provide the phototransistor current gain and to conduct the storage capacitor to the amplified current for integration.

7 . The photodetector pixel circuit of claim 6 , further comprising:
a bias current; wherein in the phototransistor mode, the bias current is provided to bias the amplifier circuit to operate; wherein in the photodiode mode, provision of the bias current for biasing the amplifier circuit is stopped, thereby the amplified current stops being generated and cut off from the storage capacitor.

8 . The photodetector pixel circuit of claim 7 , further comprising:
a reset switch, configured to reset the light intensity signal before the storage capacitor being integrating in the phototransistor mode or the photodiode mode; and an integration switch, configured to conduct the storage capacitor for being integrating in the phototransistor mode or the photodiode mode.

9 . The photodetector pixel circuit of claim 8 , further comprising a pre-bias transistor, wherein the amplifier circuit includes a first amplifying transistor and a second amplifying transistor, wherein
the pre-bias transistor is connected between a supply voltage and a pre-bias node, the integration switch is connected between the pre-bias node and the storage capacitor, the reset switch is connected between the storage capacitor and the supply voltage, the swap switch is connected between the pre-bias node and the base of the photovoltaic BJT, a gate and a drain of the first amplifying transistor are connected to the base of the photovoltaic BJT and an inverting node respectively, and a gate, a drain and a source of the second amplifying transistor are connected to the inverting node, the pre-bias node and the emitter of the photovoltaic BJT respectively.

10 . The photodetector pixel circuit of claim 9 ,
wherein during an integration phase in the phototransistor mode, the bias current is provided through the inverting node to bias the first amplifying transistor which amplifies the voltage at the base of the photovoltaic BJT to generate an amplified signal on the inverting node, and the second amplifying transistor amplifies the amplified signal to regulate the voltage at the emitter of the photovoltaic BJT for biasing the photovoltaic BJT in the active region, wherein the storage capacitor integrates the emitter current through the second amplifying transistor to generate the light intensity signal, and wherein the swap switch is controlled to be off; wherein during an integration phase in the photodiode mode, provision of the bias current is stopped, thereby cutting off the second amplifier transistor to electrically disconnect the emitter of the photovoltaic BJT from the storage capacitor, and wherein the swap switch is controlled to be conductive, thereby the storage capacitor integrates the base current through the swap switch to generate the light intensity signal.

Assignees

• Pixart Imaging Inc

Inventors

• Lim Wooi-Kip
• Tan Shan-Chong

Classifications

• G06F3/033

  Pointing devices displaced or positioned by the user {, e.g. mice, trackballs, pens or joysticks}; Accessories therefor (digitisers characterised by the transducing means G06F3/041) · CPC title

• G01J1/44

  Electric circuits {(for command of an exposure part G03B7/02)} · CPC title

• G01J1/42

  using electric radiation detectors (optical or mechanical part G01J1/04; by comparison with a reference light or electric value G01J1/10) · CPC title

• G01J1/00 Primary

  Photometry, e.g. photographic exposure meter (spectrophotometry G01J3/00; specially adapted for radiation pyrometry G01J5/00 {; exposure meters built in cameras G03B17/06}) · CPC title

• H04N25/771 Primary

  comprising storage means other than floating diffusion · CPC title