Methods of fabricating fine patterns and photomask sets used therein
US-9117762-B2 · Aug 25, 2015 · US
US2016011104A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016011104-A1 |
| Application number | US-201514862340-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 23, 2015 |
| Priority date | Mar 25, 2013 |
| Publication date | Jan 14, 2016 |
| Grant date | — |
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A void-arranged structure that includes a pair of principal surfaces opposing each other and a plurality of void sections that penetrate through the pair of principal surfaces. The void-arranged structure is configured of a plurality of unit structures each of which includes a first void section and a second void section having a different shape from a shape of the first void section, and the overall shape of the unit structure, when the principal surface is viewed from above, is not mirror-symmetric with respect to a predetermined imaginary plane orthogonal to the principal surface of the void-arranged structure.
Opening claim text (preview).
1 . A void-arranged structure comprising: a pair of principal surfaces opposing each other; and a plurality of unit structures each of which has a same shape and includes at least two void sections aligned at a predetermined interval, which are connected two-dimensionally and periodically along a direction of a first principal surface of the pair of principal surfaces, and wherein the void sections penetrate through the pair of principal surfaces, wherein each unit structure of the plurality of unit structures includes a first void section and a second void section having a different shape from a shape of the first void section, and an overall shape of each unit structure, when viewed from the first principal surface, is not mirror-symmetric with respect to a predetermined imaginary plane orthogonal to the first principal surface of the void-arranged structure. 2 . The void-arranged structure according to claim 1 , wherein the imaginary plane is a plane perpendicular to a polarizing direction of electromagnetic waves irradiated on the void-arranged structure. 3 . The void-arranged structure according to claim 2 , wherein a shape of the first void section is not mirror-symmetric with respect to the imaginary plane. 4 . The void-arranged structure according to claim 1 , wherein a shape of the first void section is not mirror-symmetric with respect to the imaginary plane. 5 . The void-arranged structure according to claim 1 , wherein a ratio of a number of the first void sections to a total of the void sections included in the unit structure is greater than 50%. 6 . The void-arranged structure according to claim 1 , wherein a ratio of a number of the first void sections to a total of the void sections included in the unit structure is equal to or greater than 75%. 7 . A measurement method for measuring a measurement object comprising: holding a measurement object on the void-arranged structure according to claim 1 ; irradiating the void-arranged structure on which the measurement object is held with electromagnetic waves and detecting characteristics of the electromagnetic waves having been scattered at the void-arranged structure; and calculating a presence/absence or quantity of the measurement object from the detected characteristics of the electromagnetic waves. 8 . The measurement method according to claim 7 , wherein the electromagnetic waves strike the void-arranged structure in a direction perpendicular to at least one of the pair of principal surfaces of the void-arranged structure. 9 . The measurement method according to claim 7 , wherein the imaginary plane is a plane perpendicular to a polarizing direction of electromagnetic waves irradiated on the void-arranged structure. 10 . The measurement method according to claim 9 , wherein a shape of the first void section is not mirror-symmetric with respect to the imaginary plane. 11 . The measurement method according to claim 7 , wherein a shape of the first void section is not mirror-symmetric with respect to the imaginary plane. 12 . The measurement method according to claim 7 , wherein a ratio of a number of the first void sections to a total of the void sections included in the unit structure is greater than 50%. 13 . The measurement method according to claim 7 , wherein a ratio of a number of the first void sections to a total of the void sections included in the unit structure is equal to or greater than 75%.
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